BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB 619C yellow S Q62702-B683 1=C SOD-123 2=A Maximum Ratings Parameter Symbol Values Diode reverse voltage VR 30 Peak reverse voltage (R ≥ 5kΩ) VRM 35 Forward current IF 20 Operating temperature range Top - 55 ... + 125 Storage temperature Tstg - 55 ... + 150 Unit V mA °C Thermal Resistance Junction - ambient RthJA Semiconductor Group 1 ≤ 450 K/W Jan-08-1997 BB 619C Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR nA VR = 30 V, TA = 25 °C - - 10 VR = 30 V, TA = 85 °C - - 200 AC characteristics Diode capacitance CT pF VR = 1 V, f = 1 MHz 36 39 42 VR = 2 V, f = 1 MHz 27 30.2 33.2 VR = 25 V, f = 1 MHz 2.5 2.72 3.05 VR = 28 V, f = 1 MHz 2.4 2.55 2.8 Capacitance ratio CT2/CT25 VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio 11.1 - 13.5 15.3 - ∆CT/CT VR = 28 V, f = 1 MHz Series resistance 9.5 CT1/CT28 VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching - % - - 2.5 Ω rs VR = 5 V, f = 470 MHz Series inductance Ls Semiconductor Group 2 - 0.6 - - 2.5 - nH Jan-08-1997 BB 619C Diode capacitance CT = f (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz 10 -1 40 1/°C pF CT TCc 30 10 -2 25 10 -3 20 15 10 -4 10 5 0 0 5 10 15 20 V 10 -5 0 10 30 10 1 V VR VR Reverse current IR = f (TA) Reverse current IR = f (VR) VR = 28V TA = Parameter 10 3 10 3 85°C pA pA IR IR 10 2 10 2 25°C 10 1 10 1 10 0 10 -1 0 10 10 1 10 0 -30 V VR Semiconductor Group 3 -10 10 30 50 70 °C TA 100 Jan-08-1997