BSP 17 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 17 50 V 3.2 A 0.1 Ω SOT-223 BSP 17 Type BSP 17 Ordering Code Q67000-S220 D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Continuous drain current ID TA = 27 °C Values Unit A 3.2 IDpuls DC drain current, pulsed TA = 25 °C 12.8 EAS Avalanche energy, single pulse mJ ID = 3.2 A, VDD = 25 V, RGS = 25 Ω L = 586 µH, Tj = 25 °C 6 Gate source voltage VGS Power dissipation Ptot TA = 25 °C Semiconductor Group ± 20 V W 1.8 1 Sep-12-1996 BSP 17 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 70 Therminal resistance, junction-soldering point 1) RthJS ≤ 10 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 0 °C Gate threshold voltage 50 - - 2.1 3 4 VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V IDSS µA VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 3.2 A Semiconductor Group nA - 2 0.09 0.1 Sep-12-1996 BSP 17 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 3.2 A Input capacitance 2.5 pF - 450 600 - 220 350 - 85 150 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 4.8 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 20 30 - 40 60 - 55 70 - 40 55 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 Sep-12-1996 BSP 17 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - - 12.8 V 1.05 1.2 trr ns - 40 - Qrr VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs Semiconductor Group 3.2 - VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 6.4 A, Tj = 25 °C Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage A µC - 4 0.04 - Sep-12-1996 BSP 17 Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 2.0 3.4 W A 1.6 ID 2.8 1.4 2.4 1.2 2.0 1.0 1.6 0.8 1.2 0.6 0.8 0.4 0.4 0.2 0.0 0.0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA 120 °C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T parameter : D = 0, TC=25°C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 10 -3 0.05 single pulse 10 -4 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 17 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C l 7.5 A 6.5 ID 0.32 Ptot = 2W j i g kh fed c a Ω VGS [V] a 4.0 6.0 b 4.5 c 5.0 d 5.5 4.5 e 6.0 4.0 b f 6.5 g 7.0 h 7.5 3.0 i 8.0 2.5 j 9.0 k 10.0 l 20.0 5.5 5.0 3.5 2.0 a b RDS (on) 0.24 0.20 0.16 c 0.12 d k l 0.08 e gi fh j 1.5 0.04 VGS [V] = 1.0 a 4.0 0.5 0.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS A 4.5 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 8 7.0 S A 6.0 ID gfs 6 5.5 5.0 4.5 5 4.0 4 3.5 3.0 3 2.5 2.0 2 1.5 1.0 1 0.5 0.0 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 0.0 1.0 2.0 3.0 4.0 5.0 6.0 A ID 7.5 Sep-12-1996 BSP 17 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3.2 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.26 4.6 Ω V 0.22 4.0 RDS (on) 0.20 VGS(th) 3.6 0.18 3.2 0.16 2.8 0.14 typ 2.4 98% typ 0.12 98% 2% 2.0 0.10 1.6 0.08 1.2 0.06 0.04 0.8 0.02 0.4 0.00 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 1 10 2 nF A C IF 10 0 10 1 Ciss Coss 10 -1 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 Sep-12-1996 BSP 17 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 3.2 A, VDD = 25 V RGS = 25 Ω, L = 586 µH EAS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 6.5 60 mJ V 5.5 58 5.0 V(BR)DSS 57 56 4.5 55 4.0 54 3.5 53 3.0 52 2.5 51 50 2.0 49 1.5 48 1.0 47 0.5 46 45 0.0 20 40 60 80 100 120 °C 160 Tj Semiconductor Group -60 -20 20 60 100 °C 160 Tj 8 Sep-12-1996 BSP 17 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996