BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 180 SOT-143 RDs Q62702-F1377 1=C 2=E 3=B 4=E Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 8 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 4 Base current IB 0.5 Total power dissipation Ptot TS ≤ 124 °C Values Unit V mA mW 30 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 875 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Nov-22-1996 BFP 180 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 8 100 nA - - 100 IEBO µA - - 1 hFE IC = 1 mA, VCE = 5 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 8 V, IE = 0 Emitter-base cutoff current - ICES VCE = 10 V, VBE = 0 Collector-base cutoff current V 30 2 100 200 Nov-22-1996 BFP 180 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance 5 pF - 0.19 0.35 - 0.27 - - 0.13 - Cce VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Emitter-base capacitance 7 Ccb VCB = 5 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, VCB = vcb = 0 , f = 1 MHz F Noise figure dB IC = 1 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz - 2.1 - f = 1.8 GHz - 2.25 - f = 900 MHz - 15 - f = 1.8 GHz - 12 - f = 900 MHz - 8.5 - f = 1.8 GHz - 7 - Power gain 1) Gms IC = 1 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 1 mA, VCE = 5 V, ZS =ZL= 50 Ω 1) Gms = |S21/S12| Semiconductor Group 3 Nov-22-1996 BFP 180 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.18519 fA BF = 94.687 VAF = 26.867 V IKF = NE = 1.9818 - VAR = 3.2134 NC = - NF = 1.0236 - 0.025252 A ISE = 130.93 fA BR = 20.325 NR = 0.93013 - V IKR = 0.012138 A ISC = 6.1852 fA 1.6195 - RB = 1.4255 Ω IRB = 0.01 mA RBM = 60 Ω RE = 3.7045 Ω RC = 0.56 Ω CJE = 3.2473 fF VJE = 1.1812 V MJE = 0.41827 - TF = 14.866 ps XTF = 0.3062 - VTF = 0.22023 V ITF = 1.0202 mA PTF = 0 deg CJC = 183.69 fF VJC = 1.1812 V MJC = 0.30423 - XCJC = 0.08334 - TR = 2.2648 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.87906 - TNOM 300 K LBI = 0.89 nH LBO = 0.73 nH LEI = 0.4 nH LEO = 0.15 nH LCI = 0 nH LCO = 0.42 nH CBE = 189 fF CCB = 15 fF CCE = 187 fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Nov-22-1996 BFP 180 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 40 mW Ptot 30 TS 25 20 TA 15 10 5 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 1 RthJS Ptotmax/P totDC K/W D=0 0.005 0.001 0.02 0.05 0.1 0.2 0.5 K/W 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 2 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Nov-22-1996 BFP 180 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 10 0.40 GHz pF 10V Ccb fT 8 8V 0.30 7 0.25 6 5V 5 0.20 0.15 4 3V 3 2V 2 1V 0.7V 0.10 0.05 0.00 0 1 2 4 6 8 V VR 0 0.0 11 1.0 2.0 3.0 4.0 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 mA IC 6.0 16 8V 10V dB dB 3V G G 5V 12 16 10 3V 8 2V 2V 14 12 6 10 1V 1V 4 8 6 0.0 0.7V 1.0 Semiconductor Group 2.0 3.0 4.0 mA IC 0.7V 2 0 0.0 6.0 6 1.0 2.0 3.0 4.0 mA IC 6.0 Nov-22-1996 BFP 180 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 18 10 IC=1mA dBm dB 8V 5V 6 0.9GHz G IP3 14 4 3V 2 0 2V 1.8GHz 12 -2 -4 10 1V -6 -8 0.9GHz 8 -10 1.8GHz -12 6 -14 4 -16 -18 0.0 0 2 4 6 8 V 12 1.0 2.0 3.0 4.0 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter mA IC 6.0 10 40 IC=1mA IC=1mA dB dB G S21 8 30 7 25 6 10V 5 20 4 15 1V 3 10 2 1V 0.7V 5 0 0.0 0.7V 10V 1 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 0 0.0 3.5 7 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Nov-22-1996 BFP 180 Package Semiconductor Group 8 Nov-22-1996