Fiber Optics Medium Power BIDI® Optical Standard Module 1310 nm Emitting, 1310 nm Receiving SBM52214x Features • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in one optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well structure • Class 3B Laser Product • Suitable for bit rates up to 1.25 Gbit/s • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode • Hermetically sealed subcomponents, similar to TO 46 • With singlemode fiber pigtail BIDI® is a registered trademark of Infineon Technologies Data Sheet 1 2002-05-01 SBM52214x Pin Configuration Pin Configuration Transmitter (bottom view) Pinning 1 (on request) 2 3 LD 2.54 mm 1 MD 2 4 1 3 2 Pinning 2 (Standard) 4 LD 1 3 MD 4 Figure 1 Transmitter Receiver (bottom view) 2.54 mm Pinning 1 (Standard) Pinning 1 1 3 3 1 2 2 2.54 mm Pinning 2 (on request) 3 Pinning 2 1 1 2 Figure 2 3 2 Receiver Available Pinnings Type Transmitter Receiver SBM52214x 2 (Standard) 1 (Standard) Other Pinnings on request / different drawing set required for non standard pinning Data Sheet 2 2002-05-01 SBM52214x Description Description The Infineon module for bidirectional optical transmission has been designed for different optical networks structures. In the last few years the structure has changed from point to point planned for Broad band ISDN to a point to multipoint passive optical network (PON) architecture for the optical network in the subscriber loop. A transceiver can be realized with discrete elements (Figure 3). Transmitter and receiver with pigtails are connected with a fiber-coupler (2:1 or 2:2, wavelength independent or WDM). Transmitter Coupler Receiver Figure 3 2:1 or 2:2 3 dB wavelength independent or wavelength division multiplexing Realization with Discrete Elements Infineon has realized this transceiver configuration in a compact module called a BIDI® (Figure 4). This module is especially suitable for separating the opposing signals at the ends of a link. It replaces a discrete solution with a transmitter, receiver and coupler. The basic devices are a laser diode and a photodiode, each in a TO package, plus the filter in the beam path. A lens in the TO laser concentrates the light and enables it to be launched into the single-mode fiber of the module. In the same way the light from the fiber is focused onto the small, light-sensitive area of the photodiode to produce a high photo current. The mirror for coupling out the received signal is arranged in the beam so that the transmitter and receiver are at right angles to each other. This means the greatest possible degree of freedom in the layout of the electric circuit. Data Sheet 3 2002-05-01 SBM52214x Description Glass Lens Beam Splitter Fiber TOLaser TO-Detector Figure 4 Compact Realization of the Transceiver in One Module A decisive advantage of the module is its use of standard TO components. These devices, produced in large quantities, are hermetically sealed and tested before they are built in. This makes a very substantial contribution to the excellent reliability of the module. The solid metal package of the module serves the same purpose. It allows the use of modern laser welding techniques for reliable fixing of the different elements and the fiber holder. Data Sheet 4 2002-05-01 SBM52214x Technical Data Technical Data Absolute Maximum Ratings Parameter Symbol Limit Values min. max. –40 85 –40 85 Unit Module TC Tstg TS Operating temperature range at case Storage temperature range Soldering temperature (tmax = 10 s, 2 mm distance from bottom edge of case) °C 260 Laser Diode Direct forward current Radiant power CW Reverse Voltage IF max PF, rad VR 120 mA 2 mW 2 V VR IF 10 V 2 mA VR IF Pport 10 V 2 mA 1.5 mW Monitor Diode Reverse Voltage Forward Current Receiver Diode Reverse Voltage Forward Current Optical power into the optical port Data Sheet 5 2002-05-01 SBM52214x Technical Data The electro-optical characteristics described in the following tables are only valid for use within the specified maximum ratings or under the recommended operating conditions. Transmitter Electro-Optical Characteristics Parameter Symbol Limit Values min. typ. Unit max. Optical output power (maximum) PF, max 1.2 Emission wavelength center of range, PF = 0.5 PF, max. λtrans 1270 Spectral width (RMS) σλ 5 Temperature coefficient of wavelength TC 0.5 nm/K Threshold current (whole temperature range) Ith 45 mA Forward voltage, PF = 0.5 PF, max. VF 1.5 V Radiant power at Ith Pth 50 µW Slope efficiency (–40...85°C) η 20 100 mW/A –30 30 % 8 Ω 100 200 ps 270 500 Rise time (10%–90%) Fall time (10%–90%) 1350 2 Variation of 1st derivative of P/I Svar (0.1 to 1.0 mW) Differential series resistance mW RS tr tf nm Monitor Diode Electro-Optical Characteristics Parameter Symbol Limit Values min. Dark current, VR = 5 V, PF = 0, T = Tmax 50 Capacitance, VR = 5 V, f = 1 MHz IR IP C5 Tracking error 1), VR = 5 V TE –1 Photocurrent, VR = 5 V, PF = 0.5 PF, max 1) Unit max. 200 nA 1500 µA 10 pF 1 dB The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature range and relative to the reference point: Imon, ref = Imon (T = 25°C, PF = 0.5 PF, max.). Thus, TE is given by: PF [ TC ] TE [ dB ] = 10 × log -----------------------P F [ 25°C ] Data Sheet 6 2002-05-01 SBM52214x Technical Data Receiver Diode Electro-Optical Characteristics Parameter Symbol Spectral sensitivity, VR = 5 V, λ = 1310 nm Srec tr; tf Rise and fall time (10%–90%) RL = 50 Ω, VR = 5 V Limit Values Unit min. max. 0.3 1 A/W 1 ns Total capacitance VR = 5 V, Popt = 0, f = 1 MHz C 1.5 pF Dark current, VR = 5 V, Popt = 0 ID 50 nA Module Electro-Optical Characteristics Parameter Symbol Limit Values min. Optical Crosstalk1) 1) CRT Unit max. –22 dB Optical Crosstalk is defined as I Det.0 CRT [ dB ] = 10 × log ----------I Det.1 with: IDet,0: the photocurrent with PF = 0.5 PF, max., without optical input, CW laser operation, VR = 2 V and IDet,1: the photocurrent without PF, but 0.5 PF, max. optical input power, λ = 1310 nm. End of Life Time Characteristics Parameter Symbol Limit Values min. Threshold current at T = Tmax Unit max. Ith ∆ IF 7 70 Tracking Error TE –1.5 1.5 dB Detector Dark Current, VR = 2 V, T = Tmax IR IR 400 nA 1 µA Current above threshold, over full temperature range, at Imon, ref = Imon (T = 25°C, PF = 0.5 PF, max., BOL) Monitor Dark Current, VR = 2 V, T = Tmax Data Sheet 7 60 mA 2002-05-01 SBM52214x Fiber Data Fiber Data The mechanical fiber characteristics are described in the following table. Fiber Characteristics Parameter Limit Values min. typ. max. Mode Field Diameter 8 9 10 Cladding Diameter 123 125 127 Mode Field/Cladding Concentricity Error 1 Cladding Non-circularity 2 Mode Field Non-circularity 6 Cut off Wavelength 1270 Jacket Diameter 0.8 Bending Radius 30 Tensile Strength Fiber Case 5 Length 0.8 Data Sheet 8 Unit µm % nm 1 mm N 1.2 m 2002-05-01 SBM52214x Eye Safety Eye Safety Ensure to avoid exposure of human eyes to high power laser diode emitted laser beams. Especially do not look directly into the laser diode or the collimated laser beam when the diode is activated. Class 3B Laser Product According to IEC 60825-1 INVISIBLE LASER RADIATION AVOID EXPOSURE TO BEAM Class 3B Laser Product Figure 5 Required Labels Class IIIb Laser Product According to FDA Regulations Complies with 21 CFR 1040.10 and 1040.11 LASER RADIATION - AVOID DIRECT EXPOSURE TO BEAM SEMICONDUCTOR LASER INVISIBLE RADIATION CLASS IIIb LASER PRODUCT Figure 6 Required Label Laser Data Wavelength 1310 nm Maximum total output power less than 50 mW Beam divergence (1/e2) 10° Data Sheet 9 2002-05-01 SBM52214x Package Outlines Package Outlines 1) 1mm above TO-bottom connector type Dimensions in mm Figure 7 Connector Options Model Type SBM52214G SBM51214G SM FC/PC SBM52214N SBM51214N SM SC/PC 0° SBM52214Z SBM51214Z SM without connector Data Sheet 10 2002-05-01 SBM52214x Revision History: 2002-05-01 DS0 Previous Version: Page Subjects (major changes since last revision) Document’s layout has been changed: 2002-Aug. For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com. Edition 2002-05-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.