BA 887 Silicon PIN Diode Preliminary Data ● ● RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion Type Ordering Code (taped) Pin Configuration Marking 1 2 3 Package BA 887 Q62702- A SOT-23 C PDs Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation TS ≤ 40 °C1) Ptot 250 mW Junction temperature Tj 150 °C Storage temperature range Tstg – 55 … + 150 °C Junction-soldering point1) Rth JS ≤ 220 K/W Junction-ambient Rth JA ≤ 300 K/W Thermal Resistance 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10 94 BA 887 Characteristics per Diode at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. Reverse current VR = 30 V IR Forward voltage IF = 100 mA VF Diode capacitance VR = 10 V, f = 1 MHz VR = 0 V, f = 100 MHz CT max. nA – – 20 V – 0.9 – pF – – 0.52 0.27 – – Ω Forward resistance f = 100 MHz rf IF = 1.5 mA IF = 10 mA – – τL Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA 22 4.2 – – µs – Package Outline SOT-23 Semiconductor Group typ. Unit 2 2.5 – BA 887 Diode capacitance CT = f (VR) f = 1 MHz, 100 MHz Forward resistance rt = (IF), f = 100 MHz 3rd Harmonic intercept point vs forward current f = 100 MHz Semiconductor Group 3