PD - 95813 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) IRHLUB770Z4 60V, N-CHANNEL c TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHLUB770Z4 100K Rads (Si) 0.55Ω IRHLUB730Z4 300K Rads (Si) 0.55Ω ID 0.8A 0.8A IRHLUB740Z4 600K Rads (Si) 0.55Ω 0.8A IRHLUB780Z4 1000K Rads (Si) 0.55Ω 0.8A International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. UB Features: n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLUB7970Z4 Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 0.8 0.5 3.2 0.6 0.0045 ±10 2.0 0.8 0.06 4.0 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (for 5s) 43 (Typical) C mg For footnotes refer to the last page www.irf.com 1 02/02/04 IRHLUB770Z4 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 60 Typ Max Units Test Conditions — — V VGS = 0V, ID = 250µA ∆BV DSS /∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage 1.0 g fs Forward Transconductance 0.23 IDSS Zero Gate Voltage Drain Current — — 0.07 — V/°C Reference to 25°C, ID = 1.0mA — 0.55 Ω VGS = 4.5V, ID = 0.5A — — — — 2.0 — 1.0 10 V S( ) IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 8.4 100 -100 3.6 1.5 1.8 8.0 10 26 10 — Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — — 166 42 3.5 12 — — — — Gate Resistance Ω BVDSS µA nA nC ns nH ➃ VDS = VGS, ID = 250µA VDS = 10V, IDS = 0.5A ➃ VDS= 48V ,VGS= 0V VDS = 48V, VGS = 0V, TJ =125°C VGS = 10V VGS = -10V VGS = 4.5V, ID = 0.8A VDS = 30V VDD = 30V, ID = 0.8A, VGS = 4.5V, RG = 24Ω Measured from the center of drain pad to center of source pad pF VGS = 0V, VDS = 25V f = 1.0MHz Ω f = 5.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 0.8 3.2 1.2 70 75 Test Conditions A V ns nC Tj = 25°C, IS = 0.8A, VGS = 0V ➃ Tj = 25°C, IF = 0.8A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJA Junction-to-Case Min Typ Max Units — — 220 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLUB770Z4 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Test Conditions Up to 600K Rads(Si)1 1000K Rads(Si)2 Units Min Max 60 1.0 — — — — — 2.0 100 -100 1.0 0.55 60 1.0 — — — — — 2.0 100 -100 10 0.55 nA µA Ω VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA VGS = 10V VGS = -10 V VDS= 48V, VGS =0V VGS = 4.5V, ID = 0.5A Static Drain-to-Source ➃ On-State Resistance (UB) — 0.55 — 0.55 Ω VGS = 4.5V, ID = 0.5A ➃ — 1.2 — 1.2 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Diode Forward Voltage Min Max V V VGS = 0V, IS = 0.8A 1. Part numbers IRHLUB770Z4, IRHLUB730Z4, IRHLUB740Z4 2. Part number IRHLUB780Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET Energy Range (MeV/(mg/cm2)) (MeV) (µm) VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 0V -2V -4V -5V -6V -7V -8V -10V 37.3 285 36.8 60 60 60 60 60 35 30 20 I 59.9 345 32.7 60 60 60 60 60 20 15 - Au 82.3 357 28.5 60 60 60 60 - - - - VDS Br 70 60 50 40 30 20 10 0 Br I Au 0 -2 -4 -6 -8 -10 -12 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHLUB770Z4 Pre-Irradiation 10 VGS 15V 10V 5.0V 3.5V 3.0V 2.5V 2.25V BOTTOM 2.0V 10 1 2.0V 0.1 60µs PULSE WIDTH Tj = 25°C 1 2.0V 60µs PULSE WIDTH Tj = 150°C 0.1 0.01 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics T J = 150°C T J = 25°C VDS = 25V 15 60µs PULSE WIDTH 1.5 2 2.5 3 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 2.0 0.1 10 100 Fig 2. Typical Output Characteristics 10 1 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 4 VGS 15V 10V 5.0V 3.5V 3.0V 2.5V 2.25V BOTTOM 2.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP ID = 0.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 200 Ciss 150 C oss 100 50 12 VGS , Gate-to-Source Voltage (V) 250 C, Capacitance (pF) IRHLUB770Z4 ID = 0.8A VDS = 48V VDS = 30V VDS = 12V 10 8 6 4 2 C rss FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 1 10 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 10 1 T J = 25°C VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 4 5 6 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 150°C 2 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1 100µs 1ms 0.1 0.01 1.6 OPERATION IN THIS AREA LIMITED BY RDS(on) 10ms Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHLUB770Z4 Pre-Irradiation 1.0 RD VDS VGS I D , Drain Current (A) 0.8 D.U.T. RG + -VDD 0.6 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.4 Fig 10a. Switching Time Test Circuit VDS 0.2 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 0.05 10 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 1 t2 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com Pre-Irradiation IRHLUB770Z4 1 5V L VD S D .U .T. RG IA S VGS 20V D R IV E R + - VD D 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 4 TOP BOTTOM 3 2 1 0 25 V (B R )D S S ID 0.4A 0.5A 0.8A 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 4.5V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHLUB770Z4 Pre-Irradiation Footnotes: ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 6.3 mH Peak IL = 0.8A, VGS = 10V ➂ ISD ≤ 0.8A, di/dt ≤ 130A/µs, VDD ≤ 60V, TJ ≤ 150°C 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — UB 3.25 [.128] 2.82 [.115] 3X 0.61 [.024] 0.41 [.016] 3X 2.74 [.108] 2.41 [.085] 0.96 [.038] 0.56 [.022] 3 2 1 0.99 [.039] 0.89 [.035] 3X 0.355 [.014] MIN. 1.42 [.056] 0.97 [.046] NOT ES : 2.01 [.079] 1.81 [.071] PAD AS SIGNMENT S 1. OUT LINE CONFORMS T O MIL-PRF-19500/255L 2. ALL DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 3. CONT ROLLING DIMENS ION: INCH. 1 = GAT E 2 = S OURCE 3 = DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2004 8 www.irf.com