CNY64/ CNY65/ CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage Features • Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) • Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS • Thickness through insulation ≥ 3 mm • Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI ≥ 200 • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 64 Top View A • VDE related features: • Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak • Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I - IV at mains voltage ≤ 300 V For appl. class I - IV at mains voltage ≤ 600 V For appl. class I - III at mains voltage ≤ 1000 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. C 66 V D E C Agency Approvals • UL1577, File No. E76222 System Code H,J &K, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending 65 E e4 17187 Pb Pb-free Order Information Part Remarks CNY64 CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY65 CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY66 CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY64A CTR 63 - 125 %, High Isolation Distance, 4 PIN CNY65A CTR 63 - 125 %, High Isolation Distance, 4 PIN CNY64B CTR 100 - 200 %, High Isolation Distance, 4 PIN CNY65B CTR 100 - 200 %, High Isolation Distance, 4 PIN Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. VDE Standards These couplers perform safety functions according to the following equipment standards: DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements IEC 60950/EN 60950 Document Number 83540 Rev. 1.6, 26-Oct-04 www.vishay.com 1 CNY64/ CNY65/ CNY66 VISHAY Vishay Semiconductors Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) VDE 0804 VDE 0700/IEC 60335 Household equipment VDE 0160 Telecommunication apparatus and data processing Electronic equipment for electrical power installation IEC 60065 VDE 0750/IEC 60601 Safety for mains-operated electronic and related household appa- Medical equipment ratus Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 5 V Forward current IF 75 mA IFSM 1.5 A Pdiss 120 mW Tj 100 °C Forward surge current Test condition tp ≤ 10 µs Power dissipation Junction temperature Unit Output Symbol Value Unit Collector emitter voltage Parameter Test condition VCEO 32 V Emitter collector voltage VECO 7 V IC 50 mA ICM 100 mA Pdiss 130 mW Tj 100 °C Symbol Value Unit VISO 8.2 kV Total power dissipation Ptot 250 mW Ambient temperature range Tamb - 55 to + 85 °C Tstg - 55 to + 100 °C Tsld 260 °C Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature Coupler Parameter AC isolation test voltage (RMS) Test condition t = 1 min Storage temperature range Soldering temperature www.vishay.com 2 2 mm from case, t ≤ 10 s Document Number 83540 Rev. 1.6, 26-Oct-04 CNY64/ CNY65/ CNY66 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 50 mA Test condition Symbol VF Min 1.25 1.6 Junction capacitance VR = 0, f = 1 MHz Cj 50 Unit V pF Output Symbol Min Collector emitter voltage Parameter IC = 1 mA Test condition VCEO 32 Typ. Max Unit V Emitter collector voltage IE = 100 µA VECO 7 V Collector-emitter leakage current VCE = 20 V, If = 0 ICEO 200 nA Max Unit 0.3 V Coupler Parameter Test condition Symbol Min Typ. Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF Current Transfer Ratio Parameter IC/IF Test condition Part Symbol Min CTR 50 300 % CNY64A CTR 63 125 % CNY65A CTR 63 125 % CNY64B CTR 100 200 % CNY65B CTR 100 200 % VCE = 5 V, IF = 10 mA Typ. Max Unit Maximum Safety Ratings (according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Parameter Test condition Forward current Symbol Min Typ. IF Max Unit 120 mA Max Unit 250 mW Output Parameter Power dissipation Document Number 83540 Rev. 1.6, 26-Oct-04 Test condition Symbol Pdiss Min Typ. www.vishay.com 3 CNY64/ CNY65/ CNY66 VISHAY Vishay Semiconductors Coupler Parameter Test condition Rated impulse voltage Safety temperature Symbol Max Unit VIOTM Min Typ. 8 kV Tsi 150 °C Max Unit Insulation Rated Parameters Parameter Test condition Symbol Min Vpd 2.8 kV VIOTM 8 kV Vpd 2.2 kV VIO = 500 V, Tamb = 25 °C RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 11 Ω VIO = 500 V, Tamb = 150 °C RIO 9 Ω Partial discharge test voltage Routine test 100 %, ttest = 1 s Partial discharge test voltage Lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) Insulation resistance 10 10 Typ. (construction test only) VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s 250 225 Psi (mW) 200 175 VPd 150 VIOWM VIORM 125 100 75 I si (mA) 50 0 t3 ttest t4 25 0 0 25 95 10922 50 75 100 125 150 175 200 4 tTr = 60 s t2 tstres t Tamb ( °C ) Figure 1. Derating diagram www.vishay.com 13930 t1 Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 Document Number 83540 Rev. 1.6, 26-Oct-04 CNY64/ CNY65/ CNY66 VISHAY Vishay Semiconductors Switching Characteristics Test condition Symbol Delay time Parameter VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) td Min Typ. 2.6 Max µs Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) tr 2.4 µs Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) tf 2.7 µs Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) ts 0.3 µs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) ton 5.0 µs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) toff 3.0 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 4) ton 25.0 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 4) toff 42.5 µs IF 0 +5V IF IF IC = 5 mA; adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 Ps Channel I Channel II 50 W 100 W Oscilloscope RL t 1 MW CL d 20 pF Figure 3. Test circuit, non-saturated operation 0 IF IF = 10 mA 96 11698 0 IC tp t 100% 90% 10% 0 tp td tr ton (= td + tr) 95 10900 Unit tr td ton ts pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) t tf toff storage time fall time turn-off time Figure 5. Switching Times +5V IC RG = 50 Ω tp = 0.01 T tp = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope RL≥ 1M Ω CL ≤ 20 pF 95 10843 Figure 4. Test circuit, saturated operation Document Number 83540 Rev. 1.6, 26-Oct-04 www.vishay.com 5 CNY64/ CNY65/ CNY66 VISHAY Vishay Semiconductors 200 1000 160 ICEO– Collector Dark Current, with open Base ( nA) Ptot –Total Power Dissipation ( mW ) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 120 Coupled Device 80 Phototransistor IR-Diode 40 V CE=20V I F=0 100 10 0 1 0 25 50 75 100 Tamb – Ambient Temperature (°C ) 95 11003 Figure 6. Total Power Dissipation vs. Ambient Temperature 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature (°C ) 96 12000 Figure 9. Collector Dark Current vs. Ambient Temperature 100 IC – Collector Current ( mA) I F - Forward Current ( mA ) 1000 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F - Forward Voltage ( V ) 10 1 0.1 0.01 0.1 0.1 96 11862 V CE=5V 100 10 I F – Forward Current ( mA ) 95 11012 Figure 7. Forward Current vs. Forward Voltage 1 Figure 10. Collector Current vs. Forward Current 1.4 1.3 V CE=5V I F=10mA 1.2 1.1 1.0 0.9 0.8 0.7 I F=50mA 10mA 10 5mA 2mA 1 1mA 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 96 11911 Tamb – Ambient Temperature ( °C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 6 IC – Collector Current ( mA ) CTR rel– Relative Current Transfer Ratio 100 1.5 0.1 0.1 95 11013 1 100 10 V CE – Collector Emitter Voltage ( V ) Figure 11. Collector Current vs. Collector Emitter Voltage Document Number 83540 Rev. 1.6, 26-Oct-04 CNY64/ CNY65/ CNY66 VISHAY ton / toff - Turn on / Turn off Time ( µ s ) VCEsat– Collector Emitter Saturation Voltage (V) Vishay Semiconductors 1.0 0.9 0.8 0.7 CTR=50% 0.6 0.5 0.4 0.3 0.2 20% 0.1 10% 0.0 1 10 I C – Collector Current ( mA ) 96 11912 Non Saturated Operation VS = 5 V R L = 100 Ω ton 15 toff 10 5 0 0 100 95 11016 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current CTR – CurrentTransfer Ratio ( % ) 20 2 4 6 8 10 I C - Collector Current ( mA ) Figure 15. Turn on / off Time vs. Collector Current 1000 V CE=5V 100 10 1 0.1 1 100 10 I F – Forward Current ( mA ) 95 11015 ton / toff - Turn on / Turn off Time ( µ s ) Figure 13. Current Transfer Ratio vs. Forward Current 50 toff 40 30 ton 20 Saturated Operation VS = 5 V RL = 1 kΩ 10 0 0 95 11017 5 10 15 20 I F - Forward Current ( mA ) Figure 14. Turn on / off Time vs. Forward Current Document Number 83540 Rev. 1.6, 26-Oct-04 www.vishay.com 7 CNY64/ CNY65/ CNY66 VISHAY Vishay Semiconductors Package Dimensions in mm 14765 Package Dimensions in mm 14763 www.vishay.com 8 Document Number 83540 Rev. 1.6, 26-Oct-04 VISHAY CNY64/ CNY65/ CNY66 Vishay Semiconductors Package Dimensions in mm 14764 Document Number 83540 Rev. 1.6, 26-Oct-04 www.vishay.com 9 CNY64/ CNY65/ CNY66 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83540 Rev. 1.6, 26-Oct-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1