Product Overview MBR2030CTL: Schottky Power Rectifier, Switch-mode, Dual, 20 A, 30 V For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes. Features • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C) 150°C Operating Junction Temperature Matched Dual Die Construction (10 A per Leg or 20 A per Package) High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL94, VO at 1/8" Mechanical Characteristics: • Case: Epoxy, Molded For more features, see the data sheet Part Electrical Specifications Product Compliance Status Configurat ion VRRM Min (V) VF Max (V) IRM Max (µA) IO(rec) Max (A) IFSM Max (A) MBR2030CTLG Pb-free Active Common Cathode 30 0.58 5000 20 150 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 trr Max (ns) Cj Max (pF) Package Type TO-220-3