Product Overview MBR3100: Schottky Barrier Rectifier, 100 V, 3.0 A For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier?s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes. Features • • • • • • • • Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature High Surge Capacity Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) For more features, see the data sheet Part Electrical Specifications Product Compliance Status Configurat ion VRRM Min (V) VF Max (V) IRM Max (µA) IO(rec) Max (A) IFSM Max (A) MBR3100G Pb-free Active Single 100 0.79 600 3 150 Axial Lead-2 Active Single 100 0.79 600 3 150 Axial Lead-2 Halide free MBR3100RLG AEC Qualified Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 trr Max (ns) Cj Max (pF) Package Type