FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 18-DEC-2002 SUBJECT: ON Semiconductor Final Product/Process Change Notification #12646 TITLE: Final Notification for Primarion to Phenitec Wafer Fab Transfer EFFECTIVE DATE: 16-Feb-2003 AFFECTED CHANGE CATEGORY: Subcontractor Fab Site AFFECTED PRODUCT DIVISION: Bipolar Discretes Products Div ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Laura Rivers <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office or Barbara Matteson <[email protected]> FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact Sales Office or Fred Marchesi <[email protected]> DISCLAIMER: Final Product/Process Change Notification (FPCN) - Final Notification completing the notification process. Distributed at least 60 days from the effective date of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office. DESCRIPTION AND PURPOSE: This is the first of three FPCNs that will be issued to complete the changes stated in IPCN #12106 Initial Notification for Primarion to Phenitec Wafer Fab Transfer. This notification applies only to the N Channel JFET Family. The specific device list is included below. In order to continue to fully support our customer's requirements for N-Channel JFET, the fabrication of these devices is being moved from ON Semiconductor's current subcontractor wafer fab, Primarion in Phoenix to a new subcontractor wafer fab, Phenitec in Japan. Phenitec has been a qualified wafer fab for ON Semiconductor and has been supplying TMOS, Logic and Analog devices to ON Semiconductor and has been manufacturing various packages for several years. Issue Date: 18 December, 2002 Page 1 of 3 Final Product/Process Change Notification #12646 RELIABILITY DATA SUMMARY: *Qual vehicle list Qual Vehicle -----------MMBFJ310LT1 Qual Plan: TEST --------Autoclave Temperature Cycle Technology -----------N-ch JFET Reason Chosen --------------------------------Large die(18X17 mils), medium voltage(25V), Most complex, historical data, CONDITIONS -----------------------Ta=121DegC , RH=100%, P=15 psig, INTERVAL -------0 96 Ta=65/+150DegC, Air to 0 Air, Dwell equal to or 500 greater than 15 Min., 1000 Transfer equal to or less than 10 Min. IOL Ton=2 min, Toff=2min, Ta=25 DegC External Visual Equal to or greater N/M than Mid-Std-750, Method 2071 D.P.A 7500 cycles 15000 cycles SIZE ----336 336 FAILURES ---------------0/336 0/336 336 336 336 0/336 0/336 0/336 336 336 0/336 0/336 100% Random sample of good N/M Temp Cycle and H3TRB devices per CDF-AEC-Q101-004 Section 6 Passed Die Bond (Die Shear) In-process assembly N/M 45 Passed Wire Bond (Pull) In-process assembly N/M 45 Passed Bond Strength, Ball Shear In-process assembly N/M 45 Passed High Humidity High Temp. Reverse Bias Ta=+85DegC, RH=85% 0 504 1008 336 336 336 0/336 0/336 0/336 High Temp. Reverse Bias Ta=+150DegC 0 504 1008 336 336 336 0/336 0/336 0/336 Electro Static Discharge Human Body Model & Machine Models 1 & 2 N/M 42 Class 1C Class A ELECTRICAL CHARACTERISTIC SUMMARY: Data Available Upon Request. CHANGED PART IDENTIFICATION: Not Applicable Issue Date: 18 December, 2002 Page 2 of 3 Final Product/Process Change Notification #12646 AFFECTED DEVICE LIST (WITHOUT SPECIALS): PART 2N3819 2N5457 2N5458 2N5485 2N5486 2N5486RLRP 2N5555 2N5638RLRA 2N5639 2N5639RLRA BF245A BF245B BF256A BFR30LT1 BFR31LT1 BSR58LT1 J110 J110RLRA J111RL1 J111RLRA J111RLRP J112 J112RL1 J112RLRA J309 J310 J310RLRP J310ZL1 MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 MMBF4416LT1 MMBF5457LT1 MMBF5484LT1 MMBFJ309LT1 MMBFJ310LT1 MMBFJ310LT3 MMBFU310LT1 MPF102 MPF4392 MPF4393 MPF4393RLRP Issue Date: 18 December, 2002 Page 3 of 3