PNP Silicon Darlington Transistors BSP 60 … BSP 62 High collector current ● Low collector-emitter saturation voltage ● Complementary types: BSP 50 … BSP 52 (NPN) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BSP 60 BSP 61 BSP 62 BSP 60 BSP 61 BSP 62 Q62702-P1166 Q62702-P1167 Q62702-P1168 B SOT-223 C E C Maximum Ratings Parameter Symbol Values Unit BSP 60 BSP 61 BSP 62 Collector-emitter voltage VCER 45 60 80 Collector-base voltage VCB0 60 80 90 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 2 Base current IB 0.1 Total power dissipation, TS = 124 ˚C Ptot 1.5 W Junction temperature Tj 150 ˚C Storage temperature range Tstg V A – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 72 Junction - soldering point Rth JS ≤ 17 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BSP 60 … BSP 62 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 45 60 80 – – – – – – 60 80 90 – – – – – – DC characteristics Collector-emitter breakdown voltage1) IC = 10 mA, RBE = 150 Ω BSP 60 BSP 61 BSP 62 Collector-base breakdown voltage IC = 100 µA, IB = 0 BSP 60 BSP 61 BSP 62 V V(BR)CER V(BR)CB0 Emitter-base breakdown voltage IE = 100 µA, IB = 0 V(BR)EB0 5 – – Collector-emitter cutoff current VCE = VCERmax, VBE = 0 ICES – – 10 Emitter-base cutoff current VEB = 4 V, IC = 0 IEB0 – – 10 DC current gain2) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE Collector-emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA VCEsat Base-emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA VBEsat µA – 1000 2000 – – – – V – – – – 1.3 1.8 – – – – 1.9 2.2 fT – 200 – MHz ton toff – – 400 1500 – – ns ns AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz Switching times IC = 500 mA, IB1 = IB2 = 0.5 mA (see diagrams) 1) 2) Compare RBE for thermal stability. Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 BSP 60 … BSP 62 Switching time test circuit Switching time waveform Semiconductor Group 3 BSP 60 … BSP 62 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy External resistance RBE = f (TA)** VCB = VCE max ** RBE max for thermal stability Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4 BSP 60 … BSP 62 Collector-emitter saturation voltage IC = f (VCE sat), IB-parameter Base-emitter saturation voltage IC = f (VBE sat), IB-parameter Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Semiconductor Group 5