BSP88 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Product Summary Feature VDS · N-Channel 240 V 6 W 0.35 A RDS(on) · Enhancement mode ID · Logic Level · dv/dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant rated Pb-free lead plating; RoHS compliant • 2.8V 4 3 x Qualified according to AEC Q101 2 1 Type Package Tape and Reel Information Marking Packaging BSP88 PG-SOT223 L6327: 1000 pcs/reel BSP88 Non dry Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current Value Unit A ID TA=25°C 0.35 TA=70°C 0.28 Pulsed drain current VPS05163 ID puls 1.4 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.35A, V DS=192V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD class (JESD22-A114-HBM) V 1A (>250V, <500V) Power dissipation Ptot 1.8 W -55... +150 °C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2009-08-18 BSP88 Rev. 2.1 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 25 @ min. footprint - - 115 @ 6 cm2 cooling area 1) - - 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 240 - - VGS(th) 0.6 1 1.4 Static Characteristics Drain-source breakdown voltage V V GS=0, ID=250µA Gate threshold voltage, VGS = VDS ID=108µA Zero gate voltage drain current µA IDSS V DS=240V, VGS=0, Tj=25°C - - 0.1 V DS=240V, VGS=0, Tj=150°C - - 10 IGSS - 1 10 nA RDS(on) - 4.9 15 W RDS(on) - 4.6 7.5 RDS(on) - 4 6 Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=2.8V, ID=0.014A Drain-source on-state resistance V GS=4.5V, ID=0.32A Drain-source on-state resistance V GS=10V, ID=0.35A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2009-08-18 BSP88 Rev. 2.1 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.19 0.38 - S pF Dynamic Characteristics Transconductance g fs V DS³2*I D*RDS(on)max, ID=0.28A Input capacitance Ciss V GS=0, VDS=25V, - 76 95 Output capacitance Coss f=1MHz - 12 15 Reverse transfer capacitance Crss - 6 9 Turn-on delay time td(on) V DD=120V, V GS=4.5V, - 3.6 5.4 Rise time tr ID=0.35A, R G=15W - 3.5 5.2 Turn-off delay time td(off) - 17.9 26.8 Fall time tf - 18.9 28.3 - 0.2 0.3 - 2 3 - 4.5 6.8 V(plateau) V DD=192V, ID = 0.35 A - 2.7 - V IS - - 0.35 A - - 1.4 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=192V, ID=0.35A V DD=192V, ID=0.35A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0, IF = I S - 0.86 1.2 V Reverse recovery time trr V R=120V, IF=lS, - 66 82 ns Reverse recovery charge Qrr di F/dt=100A/µs - 119 149 nC Page 3 2009-08-18 BSP88 Rev. 2.1 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: V GS³ 10 V 1.9 BSP88 0.38 A 1.6 0.32 1.4 0.28 1.2 0.24 ID Ptot W BSP88 1 0.2 0.8 0.16 0.6 0.12 0.4 0.08 0.2 0.04 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 °C TA 3 Safe operating area 4 Transient thermal impedance ID = f ( V DS ) ZthJA = f (tp) parameter : D = 0 , TA = 25 °C parameter : D = t p/T 10 160 TA 1 BSP88 10 2 A BSP88 K/W tp = 160.0µs /ID RD o S( n) = VD 10 1 S ZthJA ID 10 0 1 ms 10 ms 10 -1 10 0 D = 0.50 0.20 0.10 10 -2 10 -1 0.05 single pulse 0.02 DC 0.01 10 -3 0 10 10 1 10 2 V 10 3 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 tp Page 4 2009-08-18 4 BSP88 Rev. 2.1 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 9 0.64 W 3.4V 3.8V 4V 0.48 4.4V 5V 6V 0.4 7V 10V 7 RDS(on) ID A 3.2V 6 3.4V 3.8V 4.4V 5V 6V 7V 10V 2.6V 3.2V 5 2.6V 0.32 4 0.24 3 0.16 2 0.08 0 0 1 0.5 1 1.5 2 2.5 3 V VDS 0 0 4 0.08 0.16 0.24 0.32 0.4 0.48 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max g fs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.64 A ID 0.64 A ID 0.64 0.6 A S g fs ID 0.48 0.4 0.32 0.4 0.3 0.24 0.2 0.16 0.1 0.08 0 0 0.5 1 1.5 2 2.5 V 3.5 VGS Page 5 0 0 0.08 0.16 0.24 0.32 0.4 0.48 2009-08-18 BSP88 Rev. 2.1 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 0.35 A, VGS = 10 V parameter: V GS = VDS; ID = 108 µA 30 BSP88 1.8 W V 98% 1.4 VGS(th) RDS(on) 24 22 20 18 1.2 typ. 1 16 14 0.8 12 2% 0.6 10 8 98% 0.4 6 typ 4 0.2 2 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 1 BSP88 A pF Ciss 10 0 C IF 10 2 Coss 10 1 10 -1 Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 V 30 VDS 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2009-08-18 BSP88 Rev. 2.1 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG ); parameter: VDS , ID = 0.35 A pulsed, Tj = 25 °C V(BR)DSS = f (Tj) 16 BSP88 291 BSP88 V V(BR)DSS V VGS 12 10 276 271 266 261 256 8 0.2 VDS max 251 0.5 VDS max 246 6 0.8 V DS max 241 236 4 231 226 2 221 0 0 1 2 3 4 5 nC 216 -60 7 QG -20 20 60 100 °C 180 Tj Page 7 2009-08-18 Rev. 2.1 Page 8 BSP88 2009-08-18