PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance BF 550 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BF 550 LA Q62702-F944 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 25 Base current IB 5 Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient2) 1) 2) 450 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 550 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR) CE0 40 – – Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR) CB0 40 – – Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR) EB0 4 – – Collector cutoff current VCB = 30 V, IE = 0 ICB0 – – 100 nA DC current gain IC = 1 mA, VCE = 10 V hFE 50 – 250 – Base-emitter voltage IC = 1 mA, VCE = 10 V VBE – 0.72 – V Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz fT – 350 – MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Ccb – 0.33 – pF Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Cce – 0.67 – Noise figure VCE = 10 V IC = 1 mA, f = 100 kHz, RS = 300 Ω IC = 2 mA, f = 100 MHz, RS = 60 Ω F – – 2 3.4 – – – – – – – – 550 17 35 1.3 5 5 – – – – 8 10 V AC Characteristics Y parameters, common emitter IC = 1 mA, VCE = 10 V f = 0.45 … 10 MHz g11e C11e I y21e I C22e g22e g22e f = 500 kHz f = 10 MHz Semiconductor Group 2 dB µS pF mS pF µS µS BF 550 Total power dissipation Ptot = f (TA) DC current gain hFE = f (IC) VCE = 10 V Collector current IC = f (VBE) VCE = 10 V Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Semiconductor Group 3 BF 550 Collector cutoff current ICB0 = f (TA) VCB = 30 V Transition frequency fT = f (IC) f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Output conductance g22e = f (IC) VCE = 10 V, f = 500 kHz Semiconductor Group 4 BF 550 Forward transfer admittance I y21e I = f (IC) f = 10.7 MHz Semiconductor Group Forward transfer admittance y21e VCE = 10 V 5