Product Overview NGB18N40A: Ignition IGBT, N-Channel, 18 A, 400 V For complete documentation, see the data sheet Product Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • • • • • • • • Ideal for Coil-on-Plug Applications New Design Increase Unclamped Inductive Switching (UIS) Energy per Area Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor and Gate-Emitter Resistor Applications End Products • Ignition Systems • Automotive Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) NGB18N40ACLBT4G AEC Qualified Active 400 1.8 Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 115 No 2 18 PPAP Capable Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 400 D PA K-3