INFINEON SPS01N60C3_08

SPS01N60C3
Cool MOS™ Power Transistor
Feature
VDS @ Tjmax
650
V
RDS(on)
6
Ω
ID
0.8
A
• New revolutionary high voltage technology
• Ultra low gate charge
PG-TO251-3-11
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPS01N60C3
Package
Ordering Code
PG-TO251-3-11 -
Marking
01N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC = 25 °C
0.8
TC = 100 °C
0.5
Pulsed drain current, tp limited by Tjmax
I D puls
1.6
Avalanche energy, single pulse
EAS
20
mJ
I D = 0.6 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
0.01
I D = 0.8 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR
Gate source voltage static
VGS
0.8
A
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T C = 25°C
Ptot
11
W
Operating and storage temperature
T j , T stg
-55... +150
°C
Reverse diode dv/dt 3)
dv/dt
Rev. 2.1
Page 1
15
V/ns
2008-04-07
SPS01N60C3
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
V DS = 480 V, I D = 0.8 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
11
Thermal resistance, junction - ambient, leaded
RthJA
-
-
75
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
75
@ 6 cm 2 cooling area 2)
-
-
50
-
-
260
Soldering temperature, wavesoldering
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS V GS=0V, ID=0.8A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
2.1
3
3.9
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=250µΑ, VGS=V DS
Zero gate voltage drain current
I DSS
V DS=600V, VGS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Rev. 2.1
µA
Tj=25°C,
-
0.1
1
Tj=150°C
-
-
50
V GS=30V, VDS=0V
-
-
100
Ω
V GS=10V, ID=0.5A,
Tj=25°C
-
5.6
6
Tj=150°C
-
15.1
-
Page 2
nA
2008-04-07
SPS01N60C3
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Transconductance
Symbol
g fs
Conditions
V DS≥2*I D*RDS(on)max,
Values
Unit
min.
typ.
max.
-
0.75
-
S
pF
ID=0.5A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
100
-
Output capacitance
Coss
f=1MHz
-
40
-
Reverse transfer capacitance
Crss
-
2.5
-
Turn-on delay time
td(on)
V DD=350V, V GS=0/10V,
-
30
-
Rise time
tr
ID=0.8A, RG=100Ω
-
25
-
Turn-off delay time
td(off)
-
55
82
Fall time
tf
-
30
45
-
0.9
-
-
2.2
-
-
3.9
5
-
5.5
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
V DD=350V, ID=0.8A
V DD=350V, ID=0.8A,
nC
V GS=0 to 10V
Gate plateau voltage
V(plateau) V DD=350V, ID=0.8A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3I <=I , di/dt<=400A/us, V
SD
D
DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 2.1
Page 3
2008-04-07
SPS01N60C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Inverse diode continuous
IS
Conditions
TC=25°C
Values
Unit
min.
typ.
max.
-
-
0.8
-
-
1.6
A
forward current
Inverse diode direct current,
I SM
pulsed
Inverse diode forward voltage
VSD
VGS =0V, I F=IS
-
1
1.2
V
Reverse recovery time
t rr
VR =350V, IF=IS ,
-
570
970
ns
Reverse recovery charge
Q rr
diF/dt=100A/µs
-
0.75
-
µC
Typical Transient Thermal Characteristics
Value
Symbol
Unit
Symbol
Value
typ.
Unit
typ.
Thermal resistance
Thermal capacitance
Rth1
0.225
Rth2
Cth1
0.00001221
0.395
Cth2
0.00005037
Rth3
0.603
Cth3
0.0000809
Rth4
0.995
Cth4
0.0002915
Rth5
0.691
Cth5
0.001844
Rth6
0.148
Cth6
0.412
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.1
Page 4
2008-04-07
SPS01N60C3
1 Power dissipation
2 Safe operating area
Ptot = f (TC)
ID = f ( V DS )
parameter : D = 0 , T C=25°C
10 1
12
W
A
10
9
10 0
ID
Ptot
8
7
6
5
10 -1
4
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3
2
1
0
0
20
40
60
80
100
120
°C
10 -2 0
10
160
10
1
10
2
10
V
VDS
TC
3 Transient thermal impedance
4 Typ. output characteristic
ZthJC = f (t p)
ID = f (VDS); Tj=25°C
parameter: D = tp/T
parameter: tp = 10 µs, VGS
10
2
2.5
20V
10V
K/W
A
10
7V
1
ID
ZthJC
6.5V
1.5
10 0
10 -1
6V
1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10
5.5V
0.5
5V
0
0
1
s 10
tp
Rev. 2.1
5
10
15
V
25
VDS
Page 5
2008-04-07
3
SPS01N60C3
5 Drain-source on-state resistance
6 Typ. transfer characteristics
RDS(on) = f (Tj)
ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 0.5 A, VGS = 10 V
parameter: tp = 10 µs
2.5
34
Ω
A
24
ID
RDS(on)
28
20
1.5
16
1
12
98%
8
0.5
typ
4
0
-60
-20
20
60
°C
100
0
0
180
4
8
12
VGS
Tj
20
V
7 Typ. gate charge
8 Forward characteristics of body diode
VGS = f (QGate )
IF = f (VSD)
parameter: ID = 0.8 A pulsed
parameter: Tj , tp = 10 µs
10 1
16
V
A
10 0
0.2 VDS max
10
IF
VGS
12
0.8 VDS max
8
6
10 -1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2
0
0
Tj = 150 °C (98%)
1
2
3
4
nC
10 -2
0
5.5
QGate
Rev. 2.1
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
Page 6
2008-04-07
SPS01N60C3
9 Avalanche SOA
10 Avalanche energy
IAR = f (tAR)
EAS = f (Tj)
par.: Tj ≤ 150 °C
par.: ID = 0.6 A, V DD = 50 V
0.9
22
mJ
A
18
Tj(START) =25°C
16
EAS
IAR
0.7
0.6
0.5
0.4
14
12
10
Tj(START) =125°C
8
0.3
6
0.2
4
0.1
0 -3
10
2
10
-2
10
-1
10
0
10
1
10
2
µs 10
tAR
0
25
4
50
75
100
11 Drain-source breakdown voltage
12 Typ. capacitances
V(BR)DSS = f (Tj)
C = f (VDS)
125
150
200
°C
Tj
parameter: V GS=0V, f=1 MHz
10 3
720
pF
680
Ciss
10
660
2
C
V(BR)DSS
V
640
620
Coss
10 1
600
580
Crss
560
540
-60
-20
20
60
100
°C
10 0
0
180
Tj
Rev. 2.1
Page 7
10
20
30
40
50
60
70
80
V 100
VDS
2008-04-07
SPS01N60C3
Definition of diodes switching characteristics
Rev. 2.1
Page 8
2008-04-07
SPS01N60C3
PG-TO-251-3-11
Rev. 2.1
Page 9
2008-04-07
SPS01N60C3
Rev. 2.1
Page 10
2008-04-07