Product Overview NGD8201B: Ignition IGBT For complete documentation, see the data sheet Product Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • • • • Ideal for coil on plug applications Gate-Emitter ESD Protection New Design Increases UIS Energy per Unit Area Low Saturation Voltage Applications End Products • Ignition Applications • Automotive and Motor Bike Ignition Applications Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) NGD8201BNT4G AEC Qualified Active 400 1.5 20 Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) PPAP Capable Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) 435 PD Max (W) CoPack Pack age aged Type Diode 115 No DPA K-3