Product Overview NGTB25N120IHL: IGBT 1200V 25A FS1 Induction Heating For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage. Features Benefits • Low Saturation Voltage using Trench with Fieldstop Technology • Low Switching Loss • Low Conduction Loss • Reduces system Power Dissipation Applications End Products • Induction Heating • Consumer Appliances • Soft Switching • Rice Cooker • Induction Cooktop Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) NGTB25N120IHLWG Pb-free Active 1200 1.85 0.8 25 1.7 Eon Typ (mJ) Trr Typ (ns) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) 200 Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 192 Yes TO247-3