Product Overview NGTB60N65FL2: IGBT 650V 60A Field Stop 2 IGBT For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • • • • • • Extremely Efficient Trench with Field Stop Technology Tjmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5µs Short-Circuit Capability These are Pb-Free Devices Applications End Products • Half bridge inverter • T-Type inverter • I-Type inverter • Uninterrupted Power supplies (Offline UPS and Online UPS) • Solar Inverters / PV inverters • Motor Control Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode NGTB60N65FL2WG Pb-free NEW 650 1.64 0.66 1.59 96 6.8 318 5 595 Yes 60 2.13 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO247