BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface 2 mounting (SMD) 1 VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BAT 165 White/C Q62702-A1190 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 40 V Forward current IF 750 mA Average forward current (50/60Hz, sinus) IFAV 500 Surge forward current (t< 100µs) IFSM 2.5 A Total power dissipation, T S = 66 °C Ptot 600 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ...+150 Maximum Ratings Junction - ambient 1) Junction - soldering point RthJA ≤ 275 RthJS ≤ 140 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 165 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. IR - - 50 µA IR - - 900 nA DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 65 °C Forward voltage V VF I F = 10 mA - 0.305 0.4 I F = 100 mA - 0.38 - I F = 250 mA - 0.44 0.7 I F = 750 mA - 0.58 - - 8.4 12 AC characteristics Diode capacitance CT pF VR = 10 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAT 165 Forward current IF = f (TA*;TS) * Package mounted on epoxy 800 TS mA TA IF 600 500 400 300 200 100 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 3 10 2 IFmax / IFDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Sep-04-1998 1998-11-01