INFINEON CFY67_11

CFY67
HiRel K-Band GaAs Super Low Noise HEMT

HiRel Discrete and Microwave Semiconductor

Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT

For professional super low-noise amplifiers

For frequencies from 500 MHz to > 20 GHz

Hermetically sealed microwave package

Super low noise figure, high associated gain

4
3
1
2
Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY67-06 (ql)
Marking
-
Ordering Code Pin Configuration
see below
1
2
3
4
G
S
D
S
Package
Micro-X
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
(see order instructions for ordering example)
IFAG IMM RPD D HIR
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V2, February 2011
CFY67
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
3.5
V
Drain-gate voltage
VDG
4.5
V
Gate-source voltage (reverse / forward)
VGS
- 3... + 0.5
V
Drain current
ID
60
mA
Gate forward current
IG
2
mA
RF Input Power, C- and X-Band 1)
PRF,in
+ 10
dBm
Junction temperature
TJ
150
C
Storage temperature range
Tstg
- 65... + 150
C
Total power dissipation 2)
Ptot
200
mW
Soldering temperature 3)
Tsol
230
°C
Rth JS
 515 (tbc.)
K/W
Thermal Resistance
Junction-soldering point
Notes.:
1) For VDS  2 V. For VDS > 2 V, derating is required.
2) At TS = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
IFAG IMM RPD D HIR
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V2, February 2011
CFY67
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
IDss
15
30
60
mA
Gate threshold voltage
VDS = 2 V, ID = 1 mA
-VGth
0.2
0.7
2.0
V
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V
IDp
-
< 50
-
µA
Gate leakage current at pinch-off
VDS = 1.5 V, VGS = - 3 V
-IGp
-
< 50
200
µA
Transconductance
VDS = 2 V, ID = 15 mA
gm15
50
65
-
mS
Gate leakage current at operation
VDS = 2 V, ID = 15 mA
-IG15
-
< 0.5
2
µA
Thermal resistance
junction to soldering point
Rth JS
-
450
-
K/W
IFAG IMM RPD D HIR
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CFY67
Electrical Characteristics (continued)
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
1)
Noise figure
VDS = 2 V, ID = 15 mA, f = 12 GHz
NF
dB
CFY67-06
-
0.5
0.6
CFY67-08, -08P
-
0.7
0.8
CFY67-10, 10P
-
0.9
1.0
Associated gain. 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz
Ga
dB
CFY67-06
11.5
12.5
-
CFY67-08, -08P
11.0
11.5
-
CFY67-10, 10P
10.5
11.0
-
Output power at 1 dB gain compression 2) P1dB
VDS = 2 V, ID = 20 mA, f = 12 GHz
dBm
CFY67-06, -08, -10
-
11.0
-
CFY67-08P, -10P
10.0
11.0
-
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
IFAG IMM RPD D HIR
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CFY67
Typical Common Source S-Parameters
f
|S11| <S11
[GHz] [magn] [angle]
0,5
0,963
-15
1,0
0,938
-23
1,5
0,913
-33
2,0
0,889
-42
2,5
0,865
-52
3,0
0,844
-62
3,5
0,823
-72
4,0
0,800
-81
4,5
0,779
-91
5,0
0,761 -100
5,5
0,743 -109
6,0
0,725 -117
6,5
0,708 -125
7,0
0,690 -132
7,5
0,673 -139
8,0
0,656 -146
8,5
0,640 -153
9,0
0,625 -160
9,5
0,611 -168
10,0 0,597 -175
10,5 0,586 177
11,0 0,576 169
11,5 0,564 161
12,0 0,554 154
12,5 0,547 146
13,0 0,536 139
13,5 0,529 131
14,0 0,522 124
14,5 0,517 116
15,0 0,510 108
15,5 0,505
99
16,0 0,502
91
16,5 0,499
82
17,0 0,498
74
17,5 0,498
68
18,0 0,498
62
IFAG IMM RPD D HIR
CFY67-08: V DS = 2 V, I D = 15 mA, Z o
|S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S 21 /S 12 MAG
[magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB]
[dB]
5,315 165 0,0111
74
0,655
-14
0,40
26,8
5,182 159 0,0225
68
0,639
-18
0,39
23,6
5,060 150 0,0317
62
0,625
-23
0,42
22,0
4,940 142 0,0411
57
0,611
-28
0,43
20,8
4,824 133 0,0509
53
0,596
-35
0,43
19,8
4,715 124 0,0585
46
0,582
-41
0,45
19,1
4,591 115 0,0650
41
0,567
-47
0,47
18,5
4,450 107 0,0714
36
0,552
-53
0,50
17,9
4,319
99
0,0768
31
0,534
-60
0,52
17,5
4,183
91
0,0811
25
0,520
-66
0,54
17,1
4,043
83
0,0850
20
0,500
-72
0,58
16,8
3,906
75
0,0885
15
0,490
-77
0,60
16,4
3,769
68
0,0917
11
0,477
-83
0,63
16,1
3,640
61
0,0942
7
0,467
-88
0,67
15,9
3,529
54
0,0962
3
0,455
-93
0,71
15,6
3,427
48
0,0978
-1
0,442
-97
0,76
15,4
3,344
41
0,0998
-5
0,430 -101
0,79
15,3
3,271
34
0,1010
-9
0,417 -104
0,84
15,1
3,202
28
0,1027 -12
0,406 -108
0,87
14,9
3,143
21
0,1033 -16
0,393 -113
0,91
14,8
3,089
15
0,1044 -20
0,381 -118
0,94
14,7
3,041
8
0,1056 -24
0,370 -123
0,96
14,6
3,002
1
0,1068 -28
0,358 -129
0,98
14,5
2,960
-5
0,1070 -32
0,351 -134
1,01
14,4
13,8
2,923
-12 0,1076 -36
0,343 -140
1,03
14,3
13,3
2,886
-19 0,1076 -41
0,336 -146
1,06
14,3
12,7
2,848
-26 0,1081 -45
0,330 -151
1,09
14,2
12,4
2,815
-33 0,1087 -50
0,325 -156
1,11
14,1
12,1
2,787
-40 0,1087 -55
0,320 -161
1,13
14,1
11,9
2,765
-46 0,1093 -60
0,315 -167
1,14
14,0
11,7
2,751
-54 0,1090 -65
0,311 -172
1,16
14,0
11,6
2,735
-61 0,1090 -71
0,305 -177
1,18
14,0
11,4
2,719
-68 0,1091 -77
0,301
177
1,19
14,0
11,3
2,722
-75 0,1097 -82
0,297
172
1,19
13,9
11,3
2,741
-80 0,1103 -87
0,294
168
1,18
14,0
11,4
2,760
-84 0,1107 -90
0,290
165
1,17
14,0
11,5
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V2, February 2011
CFY67
Typical Common Source S-Parameters (continued)
f
[GHz]
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
|S11|
[mag]
0,962
0,937
0,913
0,889
0,860
0,834
0,810
0,784
0,761
0,740
0,720
0,701
0,682
0,663
0,644
0,627
0,611
0,595
0,581
0,567
0,556
0,546
0,537
0,528
0,520
0,513
0,506
0,498
0,492
0,489
0,484
0,485
0,485
0,485
0,487
0,490
<S11
[ang]
-13
-22
-33
-41
-51
-61
-71
-80
-90
-99
-107
-116
-124
-131
-139
-148
-157
-165
-173
178
170
163
155
149
142
135
128
121
113
106
98
91
83
75
69
64
IFAG IMM RPD D HIR
CFY67-06: V DS = 2 V, I D = 15
|S21| <S21 |S12| <S12
[mag] [ang] [mag] [ang]
6,112 166 0,0111
76
5,956 159 0,0211
69
5,810 150 0,0302
64
5,690 142 0,0394
58
5,522 133 0,0484
53
5,386 124 0,0567
48
5,236 116 0,0637
43
5,067 107 0,0702
38
4,911
99
0,0760
33
4,752
91
0,0809
28
4,586
84
0,0851
24
4,420
76
0,0889
19
4,260
69
0,0918
15
4,107
62
0,0941
11
3,974
55
0,0962
7
3,852
49
0,0980
3
3,747
42
0,0995
-1
3,659
35
0,1008
-5
3,571
29
0,1022
-9
3,497
22
0,1039 -13
3,430
16
0,1049 -17
3,368
9
0,1064 -21
3,317
3
0,1078 -26
3,265
-4
0,1093 -30
3,216
-10 0,1105 -35
3,169
-17 0,1116 -39
3,120
-24 0,1126 -44
3,080
-30 0,1137 -49
3,044
-37 0,1151 -54
3,014
-44 0,1160 -59
2,990
-51 0,1171 -65
2,967
-58 0,1185 -71
2,945
-65 0,1197 -77
2,947
-71 0,1206 -82
2,961
-77 0,1215 -87
2,979
-81 0,1230 -90
6 of 8
mA, Z o
|S22| <S22 k-Fact. S 21 /S 12 MAG
[mag] [ang] [mag] [dB]
[dB]
0,539
-15
0,42
27,4
0,525
-19
0,42
24,5
0,511
-24
0,44
22,8
0,498
-30
0,46
21,6
0,484
-36
0,48
20,6
0,469
-43
0,50
19,8
0,456
-49
0,52
19,1
0,440
-55
0,55
18,6
0,423
-61
0,58
18,1
0,410
-67
0,60
17,7
0,397
-73
0,63
17,3
0,385
-79
0,66
17,0
0,373
-84
0,69
16,7
0,362
-89
0,73
16,4
0,351
-93
0,77
16,2
0,343
-98
0,80
15,9
0,333 -102
0,83
15,8
0,323 -107
0,86
15,6
0,313 -112
0,90
15,4
0,303 -116
0,92
15,3
0,293 -121
0,95
15,1
0,284 -127
0,98
15,0
0,274 -131
1,00
14,9
0,265 -135
1,02
14,8
13,8
0,255 -139
1,05
14,6
13,3
0,246 -143
1,07
14,5
12,9
0,235 -146
1,10
14,4
12,5
0,225 -150
1,12
14,3
12,2
0,215 -155
1,14
14,2
12,0
0,207 -159
1,15
14,1
11,8
0,200 -163
1,16
14,1
11,6
0,193 -167
1,17
14,0
11,5
0,187 -171
1,17
13,9
11,4
0,182 -175
1,17
13,9
11,4
0,177 -178
1,16
13,9
11,5
0,174
179
1,14
13,8
11,6
V2, February 2011
CFY67
Typical Common Source Noise-Parameters
CFY67-08:
f
[GHz]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
V DS = 2 V, I D = 15 mA, Z o
NF min
opt |
opt
[dB]
[magn]
[angle]
0,29
0,756
14
0,30
0,690
28
0,34
0,643
43
0,38
0,606
58
0,41
0,578
73
0,46
0,553
87
0,50
0,534
102
0,55
0,518
116
0,60
0,505
131
0,64
0,495
145
0,69
0,486
159
0,73
0,476
173
0,78
0,467
-173
0,84
0,455
-160
0,88
0,443
-146
0,93
0,428
-132
0,99
0,412
-118
1,05
0,394
-103
IFAG IMM RPD D HIR
Rn
15,60
14,65
13,56
12,10
10,53
8,86
7,16
5,62
4,29
3,23
2,53
2,22
2,37
2,96
4,01
5,47
7,26
9,61
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V2, February 2011
CFY67
Micro-X Package
Edition 2011-02
4
Published by
3
1
Infineon Technologies AG
85579 Neubiberg, Germany
2
© Infineon Technologies AG 2011
All Rights Reserved.
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
IFAG IMM RPD D HIR
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V2, February 2011