Product Overview 2N6039: 4.0 A, 80 V NPN Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. Features • High DC Current Gain hFE = 2000 (Typ) @ IC = 2.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038 VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039 • Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Space-Saving High Performance-to-Cost Ratio TO-225AA Plastic Package • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type 2N6039G Pb-free Active NPN 4 80 2 0.75 15 25 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-225-3