Product Overview 2N6042: 8.0 A, 100 V PNP Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices. Features • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044 VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045 • Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44 VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045 • Monolithic Construction with Built-In Base-Emitter Shunt Resistors • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type 2N6042G Pb-free Active PNP 8 100 2 1 20 4 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-220-3