Product Overview 2N6052: 12 A, 100 V PNP Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications. Features • High DC Current Gain hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector-Emitter Sustaining Voltage? @ 100 mA VCEO(sus) = 80 Vdc (Min)?2N6058 100 Vdc (Min)?2N6052, 2N6059 • Monolithic Construction with Built-In Base-Emitter Shunt Resistors • This is a Pb-Free Device Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type 2N6052G Pb-free Active PNP 12 100 2 0.75 18 4 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-204-2