Product Overview

Product Overview
BDX53C: Medium Power NPN Darlington Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching
applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
Features
• High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
• Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• TO-220AB Compact Package
• Pb-Free Packages are Available
Part Electrical Specifications
Product
Compliance
Status
Polarity
IC
Continuous
(A)
V(BR)CEO Min
(V)
VCE(sat) Max
(V)
hFE Min (k)
hFE Max (k)
fT Min (MHz) Package
Type
BDX53CG
Pb-free
Active
NPN
8
100
2
0.75
-
-
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO-220-3