IPD20N03L G OptiMOS =Buck converter series Product Summary Feature N-Channel Logic Level Excellent Gate Charge x RDS(on) product (FOM) 175°C operating temperature dv/dt rated Ideal for fast switching buck converters Pb.free lead plating, RoHS compliant Type Package Marking IPD20N03L G PG-TO252-3 20N03L VDS 30 V RDS(on) 20 m ID 30 A PG-TO252-3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 30 TC=100°C 25 ID puls 120 EAS 15 mJ dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation Ptot 42 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID =15A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A, VDS =24V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2008-09-01 IPD20N03L G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =25µA Zero gate voltage drain current µA IDSS VDS =30V, VGS =0V, Tj=25°C - 0.01 1 VDS =30V, VGS =0V, Tj=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 23.0 31 m RDS(on) - 15.3 20 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=15A Drain-source on-state resistance VGS =10V, ID =15A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2008-09-01 IPD20N03L G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 14 28 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =25A Input capacitance Ciss VGS =0V, VDS =25V, - 560 695 Output capacitance Coss f=1MHz - 230 280 Reverse transfer capacitance Crss - 62 93 Gate resistance RG - 1.3 - Turn-on delay time td(on) - 6.2 9.3 ns Rise time tr - 31 47 Turn-off delay time td(off) - 23 34 Fall time tf - 18 27 - 2.5 3.1 - 6.4 9.6 - 15 19 - 8 10 V(plateau) VDD =15V, ID=15A - 3.6 - V IS - - 30 A - - 120 VDD =15V, VGS=10V, ID =15A, RG =12.7 Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =15V, ID =15A VDD =15V, ID =15A, nC VGS =0 to 5V Output charge Qoss VDS =15V, ID =15A, VGS =0V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =30A - 1.1 1.4 V Reverse recovery time trr VR =15V, IF =lS , - 26 32 ns Reverse recovery charge Qrr diF /dt=100A/µs - 13 16 nC Page 3 2008-09-01 IPD20N03L G 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 50 parameter: VGS 10 V IPD20N03L 32 W IPD20N03L A 40 24 ID Ptot 35 30 25 20 16 20 12 15 8 10 4 5 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 10 1 3 IPD20N03L IPD20N03L K/W A 10 0 Z thJC tp = 24.0µs 10 -1 = V DS /I ID D 10 2 on ) 100 µs R DS ( D = 0.50 10 10 -2 0.20 0.10 1 0.05 0.02 10 -3 1 ms 0.01 single pulse 10 ms 10 0 -1 10 DC 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2008-09-01 IPD20N03L G 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS A IPD20N03L 65 Ptot = 42W VGS [V] a 3.0 h g f 60 ID 55 e 50 45 40 35 b 3.5 c 4.0 d 4.5 e 5.0 f 6.0 g 7.0 d h 10.0 c d e 55 50 45 40 35 30 30 25 25 f 20 c 20 h 15 15 10 b 10 5 5 0 0 IPD20N03L m RDS(on) 75 a 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 g VGS [V] = c 4.0 d 4.5 10 e f 5.0 6.0 20 g h 7.0 10.0 30 40 A 60 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 60 30 A S 50 40 g fs ID 45 20 35 30 15 25 20 10 15 10 5 5 0 0 1 2 3 4 5.5 V VGS Page 5 0 0 5 10 15 20 A 30 ID 2008-09-01 IPD20N03L G 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 15 A, VGS = 10 V parameter: VGS = VDS , ID = 25 µA 50 IPD20N03L 2.5 m V max. V GS(th) RDS(on) 40 35 30 25 typ. 1.5 98% 20 min. 1 typ 15 10 0.5 5 0 -60 -20 20 60 100 °C 140 0 -60 200 -20 20 60 100 °C 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 pF IPD20N03L A 10 3 10 2 IF C Ciss Coss Crss 10 2 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2008-09-01 IPD20N03L G 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 15 A, VDD = 25 V, RGS = 25 parameter: ID = 30 A pulsed 16 16 mJ V 12 VGS 12 E AS IPD20N03L 10 10 0.2 VDS max 8 8 0.5 V DS max 6 6 4 4 2 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 0.8 VDS max 4 8 12 16 nC 24 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 IPD20N03L V (BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2008-09-01 IPD20N03L G Package outline: PG-TO252-3 Page 8 2008-09-01 IPD20N03L G Page 9 2008-09-01