FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 04-FEB-2002 SUBJECT: ON Semiconductor Final Product/Process Change Notification #12279 TITLE: Final Notification – Phase#4 - Bipolar Power Wafer Fab Transfer TLS-BP6 to PHX- BP/ZR Fab EFFECTIVE DATE: 05-Apr-2002 AFFECTED CHANGE CATEGORY(S): On Semiconductor Fab Site AFFECTED PRODUCT DIVISION: Bipolar Discrete Products ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Terry Franks <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office or Jose Ramirez <[email protected]> FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact Sales Office or Jose Ramirez <[email protected]> DISCLAIMER: Final Product/Process Change Notification (FPCN) - Final Notification completing the notification process. Distributed at least 60 days from the effective date of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office. DESCRIPTION AND PURPOSE: ON Semiconductor wishes to notify its Customers that the 4th Phase of the Bipolar Power Wafer Manufacturing Operation Transfer from Toulouse-France to Phoenix-Arizona is taking place as announced in IPCN # 10863, and Product Lines using the High Voltage Planar SIPOS Technology will be transferred as indicated. ON Semiconductor continues to make substantial investments in both new technologies and improved manufacturing capabilities to provide you the highest quality and reliability in the Semiconductor industry. We believe these actions will also improve our ability to serve you better in the future. QUALIFICATION PLAN: TEST CONDITIONS EXCEPTIONS Parametric Per device specification @ 25DegC verification HTRB 1000 hrs Vcb=80% T=150DegC H3TRB 1000 hrs Vcb=100V 85DegC/85%RH Autoclave 96hrs Ta=121DegC Rh=100% 15psig Temp Cycle 1K cycles - 65DegC to 150DegC Thermal Resistance Delta VBE Die Shear Pre & Post process change comp. Wire Bond Strength Pre & Post process change comp. Wire Bond Shear Method 3 Issue Date: 04 Feb, 2002 Page 1 of 4 Final Product/Process Change Notification #12279 RELIABILITY DATA SUMMARY: MJW18008 Test Description Interval Control HTRB 168 hrs 0/77 H3TRB 168 hrs 0/77 Temp Cycle 500 cyc Autoclave 96hrs 0/77 TIP50 Test Description HTRB H3TRB Temp. Cycle Autoclave Interval 168 hrs 168 hrs 500 cyc 96hrs DZ46631 DZ43472 0/77 0/77 0/77 0/77 0/77 2/77 DZ45572 0/77 0/77 0/77 The above data only represents interim reliability data. Testing is continuing on to 1000 hours for final reliability data and readouts will also occur at 500 hours. Data expected to be available by 20Feb02 for 500 hrs and by 15Mar02 for final reliability report. ELECTRICAL CHARACTERISTIC SUMMARY: TABLE - I MJE18008 Test IEBO ICEO ICES BVCEO Cond1 Vbe= Vce= Vce= Ic= Group Cond2 9V 450V 1000V 1mA Limit=<100uA <100uA <100uA >450V Control Mean 0.08uA 0.17uA 500nA 673V Lot StDev 0.03 0.04 130 12 Cpk 1235 741 255 6.2 Eval Mean 0.02uA 0.14uA 680nA 630V Lot #1 StDev 0.05 0.19 108 2.6 Cpk 709 173 152 22.7 Eval Mean 0.16uA 0.19uA 480nA 605V Lot #2 StDev 0.43 0.07 853 4.1 Cpk 78 462 19 12.7 Eval Mean 0.09uA 0.27uA 894nA 610V Lot #3 StDev 0.16 0.27 46 3.2 Cpk 203 125 344 16.7 TABLE - II MJE18008 Test ICES VCE(sat) Cond1 Vce= Ic=2.0A Group Cond2 800V Ib=0.2A 150C Limit= <500uA <0.6V Control Mean 130uA 282mV Lot StDev 60 16 Cpk 6.7 HFE Ic=1A Vce=5V 14-34 25.4 1.4 2.1 23.7 0.5 6.9 27.3 0.96 2.3 27.5 0.6 3.7 HFE Ic=4.5A Vce=1V >6 9.4 0.5 2.4 8.9 0.4 2.4 11.2 0.41 4.2 11.3 0.2 8.7 hFE Ic=2A Vce=1V >11 16.4 0.8 2.2 15 0.76 1.7 18.5 0.67 3.7 18.6 0.36 7.1 hFE Ic=10mA Vce=5V >10 23.8 2.1 2.2 22.6 0.66 6.3 26.9 1.32 4.3 26.8 0.73 7.7 VCE(sat) VBE(sat) VBE(sat) VCE(sat) VCE(sat) hFE Ic=4.5A Ic=2.0A Ic=4.5A Ic=2A Ic=4.5A Ic=4.5A Ib=0.9A Ib=0.2A Ib=0.9A Ib=0.2A Ib=0.9A Vce=1V 150C 150C 150C <0.7V <1.1V <1.25V <0.65V <0.8V >5 358mV 814mV 914mV 365mV 583mV 6.2 13 0.5 1 31 84 0.36 9.0 212 100.2 Eval Lot #1 Mean 111uA StDev 33 Cpk 238mV 38 3.2 273mV 24 6.9 815mV 2 47.5 924mV 2 54.3 343mV 41 521mV 55 6.4 0.2 Eval Lot #2 Mean 50uA StDev 17 Cpk 154mV 10 14.9 197mV 10 18.6 809mV 0.7 13 906mV 2 57.3 247mV 14 337mV 27 7.6 0.2 Issue Date: 04 Feb, 2002 Page 2 of 4 Final Product/Process Change Notification #12279 Eval Mean 45uA Lot #3 StDev 11 Cpk 157mV 4 36.9 204mV 3 55.1 813mV 0.8 127 913mV 2 56.2 256mV 8 352mV 11 7.6 0.2 CHANGED PART IDENTIFICATION: Customers may receive Bipolar Power- High Voltage SIPOS Planar devices with the silicon Chip manufactured at the Phoenix BP/ZR Fab starting with product marked with Date Code 0215. AFFECTED DEVICE LIST(WITHOUT SPECIALS): PART 2N6497 BU323Z BUB323Z BUB323ZT4 BUD42D BUD42D-001 BUD43D2-001 BUD43D2T4 BUD44D2-001 BUH100 BUH150 BUH50 BUH51 BUL146 BUL146F BUL147 BUL42D BUL44 BUL45 BUL45D2 BUL642D2 BUX85 MJB18004D2T4 MJD18002D2T4 MJD47 MJD47T4 MJD50 MJD50-001 MJD50T4 MJE13003 MJE13005 MJE13007 MJE13009 MJE18002 MJE18004 MJE18004D2 MJE18006 MJE18008 MJE5740 MJE5742 MJF18004 MJF18008 MJF47 Issue Date: 04 Feb, 2002 Page 3 of 4 MJW18020 SJEC13003WP TE02570 TEC0193APF TEC0193BPF TIP47 TIP48 TIP50 Issue Date: 04 Feb, 2002 Page 4 of 4