PMEG6030EP NXP Product Reliability

Product Reliability
Reliability Investigation Results for Product Type PMEG6030EP
Time period:
Q4/2013 to Q3/2014
Test Results
AEC-Q101 Test
Conditions
Duration
Quantity
Rejects
all parts
see below
43440
0
#1
TEST
Pre- and Post-Stress
Electrical Test
Tamb = 25 °C
N/A
#2
PC
Preconditioning
JESD22-A113
Bake Tamb = 125 °C
Soak Tamb = 85 °C, RH = 85%
Reflow soldering
24 hours
168 hours
3 cycles
#5
HTRB
High Temperature Reverse
Bias
JESD22-A108
Tj = rated Tjmax, VR > 80% of max.
breakdown voltage [1]
1000 hours
5280
0
#7
TC
Temperature Cycling
JESD22-A104
-55 °C to Tjmax
1000 cycles
11360
0
#8
AC
Autoclave
JESD22-A102
Tamb = 121 °C, RH = 100 %
Pressure = 205 kPa (29.7 psia)
96 hours
11360
0
#9
H3TRB
High Humidity High
Temperature Reverse Bias
JESD22-A101
Tamb = 85 °C, RH = 85%, VR > 80 % of
rated breakdown voltage
1000 hours
11360
0
# 10
IOL
Intermittent Operating Life
MIL-STD-750 Method 1037
ton = toff, devices powered to insure
ΔTj = 125 °C for 7500 cycles or
ΔTj = 100 °C for 15000 cycles
1000 hours
9360
0
# 20
RSH
Resistance to Solder Heat
JESD22-A111 / JESD22-B106
260 °C ± 5 °C
10 s
2700
0
# 21
SD
Solderability
J-STD-002
245 °C ± 5 °C
3s
2790
0
[1]
The physical limitations of Schottky diodes have to be considered (thermal runaway).
Calculation of FIT and MTBF
Test considered for FIT calculation: High Temperature Reverse Bias (HTRB, AEC-Q101 Test # 5)
Confidence level 60%, derated to 55 °C, activation energy 0.7 eV, test time 168 to 1000 hours
Wafer Fab
Technology
Quantity
Rejects
Failure Rate
MTBF
NXP DHAM
Schottky
5280
0
0.80 FIT
141837 years
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