Pr el im in ar y Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com Pr el im in ar y THIS PAGE INTENTIONALLY LEFT BLANK HMC797A v00.1115 Typical Applications Features The hmC797A is ideal for: High P1dB Output Power: +28 dBm • Test Instrumentation High Psat Output Power: +31 dBm • Microwave Radio & VSAT High Gain: 14.5 dB • Military & Space High Output IP3: +40 dBm • Telecom Infrastructure Supply Voltage: +10 V @ 400 mA • Fiber Optics 50 Ohm Matched Input/Output y Die Size: 2.89 x 1.55 x 0.1 mm General Description im in ar Functional Diagram Pr el Amplifiers - Linear & Power - Chip 1 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz The hmC797A is a GaAs mmiC phemT Distributed power Amplifier die which operates between DC and 22 Ghz. The amplifier provides 14.5 dB of gain, 40 dBm output ip3 and +28 dBm of output power at 1 dB gain compression while requiring 400mA from a +10V supply. This versatile pA exhibits a positive gain slope from 3 to 21 Ghz making it ideal for ew, eCm, radar and test equipment applications. The hmC797A amplifier i/os are internally matched to 50 ohms facilitating integration into mutli-Chipmodules (mCms). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +10V, Vgg2 = +3.5V, Idd = 400 mA* Parameter Min. Frequency Range Typ. Max. Min. DC - 10 Typ. Max. Min. 10 - 18 Typ. Max. Units 18 - 22 GHz dB Gain 13.5 14.5 15.5 Gain Flatness ±0.5 ±0.7 ±0.4 dB Gain Variation Over Temperature 0.009 0.01 0.012 dB/ °C dB Input Return Loss 16 17 18 Output Return Loss 16 18 17 dB 28 dBm 31 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 27 28.5 27 28.5 31 31 26.5 Output Third Order Intercept (IP3) 41 40 39 dBm Noise Figure 3.5 3 3.5 dB Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 400 400 400 mA * Adjust Vgg1 between -2 to 0V to achieve Idd = 400 mA typical. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC797A v00.1115 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Typical Supply Current vs. Vdd Absolute Maximum Ratings +12 Vdc Vdd (V) idd (mA) 400 Gate Bias Voltage (Vgg1) -3 to 0 Vdc +9 Gate Bias Voltage (Vgg2) Vgg2 = (Vdd -6.5V) to 4.5V. for Vdd <8.5V, Vgg2 must remain >2V +10 400 +11 400 rf input power (rfin) +27 dBm Channel Temperature 150 °C Continuous pdiss (T= 85 °C) (derate 69 mw/°C above 85 °C) 4.5 w Thermal resistance (channel to die bottom) 14.5 °C/w 2 29 dBm -65 to 150°C operating Temperature -55 to 85 °C ar output power into Vswr >7:1 storage Temperature y eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions Pr el im in Outline Drawing Amplifiers - lineAr & power - Chip Drain Bias Voltage (Vdd) NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2