Product Overview MJ11032: 50 A, 120 V NPN Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with Built-In Base-Emitter Shunt Resistor • Junction Temperature to +200°C • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type MJ11032G Pb-free Active NPN 50 120 2.5 1 18 - For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-204-2 / TO-3-2