SPD 07N20 G SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS(on) 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated Pin 1 Type Package Pb-free Packaging SPD07N20 G PG-TO252 Yes Tape and Reel SPU07N20 G PG-TO251 Yes Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current G Value D S Unit A ID TC = 25 ˚C 7 TC = 100 ˚C 4.5 Pulsed drain current Pin 2 Pin 3 IDpulse 28 EAS 120 EAR 4 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 40 W -55... +175 ˚C TC = 25 ˚C Avalanche energy, single pulse mJ ID = 7 A, VDD = 50 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 7 A, V DS = 160 V, di/dt = 200 A/µs, Tjmax = 175 ˚C TC = 25 ˚C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Rev. 2.4 55/150/56 Page 1 2008-09-01 SPD 07N20 G Thermal Characteristics Parameter Values Symbol min. typ. Unit max. Characteristics Thermal resistance, junction - case RthJC - Thermal resistance, junction - ambient, leded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area1) - - 50 3.1 K/W Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Unit Values min. typ. max. V(BR)DSS 200 - - VGS(th) 2.1 3 4 Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 1 mA Zero gate voltage drain current µA IDSS VDS = 200 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 125 ˚C - - 100 - 10 100 Gate-source leakage current IGSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 10 V, ID = 4.5 A - 0.3 0.4 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Page 2 2008-09-01 SPD 07N20 G Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. g fs 3 4.2 - S Ciss - 400 530 pF Coss - 85 130 Crss - 45 70 td(on) - 10 15 tr - 40 60 td(off) - 55 75 tf - 30 40 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 4.5 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Rise time VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Fall time VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Rev. 2.4 Page 3 2008-09-01 SPD 07N20 G Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 5 7.5 Qgd - 10 22.5 Qg - 21 31.5 V(plateau) - 7 - V IS - - 7 A I SM - - 28 VSD - 1.3 1.7 V t rr - 200 300 ns Q rr - 0.6 0.9 µC Dynamic Characteristics Gate to source charge nC VDD = 160 V, ID = 7 A Gate to drain charge VDD = 160 V, ID = 7 A Gate charge total VDD = 160 V, ID = 7 A, V GS = 0 to 10 V Gate plateau voltage VDD = 160 V, ID = 7 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 14 A Reverse recovery time VR = 100 V, I F=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 100 V, I F=lS , di F/dt = 100 A/µs Rev. 2.4 Page 4 2008-09-01 SPD 07N20 G Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V SPD07N20 SPD07N20 45 7.5 A W 6.0 35 30 5.0 ID Ptot 5.5 25 4.5 4.0 3.5 20 3.0 15 2.5 2.0 10 1.5 1.0 5 0.5 0 0 20 40 60 80 100 120 ˚C 0.0 160 0 20 40 60 80 100 120 TC 160 TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T 10 2 ˚C SPD07N20 10 1 SPD07N20 K/W A /I D tp = 22.0 µs V DS 10 0 Z thJC = 100 µs R ID DS ( on ) 10 1 10 -1 1 ms D = 0.50 0.20 10 0 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse DC 10 -1 10 0 10 1 10 2 V 10 3 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Rev. 2.4 10 -3 -7 10 Page 5 2008-09-01 SPD 07N20 G Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS SPD07N20 17 Ptot = 40W SPD07N20 1.3 A Ω f VGS [V] a 14 ID 12 e 10 8 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 d h 7.5 6 c 4 i 8.0 j 9.0 k 10.0 l 20.0 a 0.8 0.7 0.6 0.5 0.4 0.3 l 0.2 a 4.0 0.1 6 V 8 11 0.0 VDS f h kg j i VGS [V] = a 4 e d 0.9 2 2 c 1.0 b 0 0 b 1.1 4.0 b RDS(on) l i j kh g 0 b 4.5 c 5.0 2 d 5.5 e f 6.0 6.5 4 g 7.0 h i 7.5 8.0 6 8 k l 10.0 20.0 j 9.0 A 12 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max gfs = f(ID ); Tj = 25˚C parameter: gfs 13 6 A 11 S 10 9 gfs ID 4 8 7 3 6 5 2 4 3 1 2 1 0 0 1 2 3 4 5 6 7 8 V 0 10 VGS Rev. 2.4 0 2 4 6 8 10 12 14 16 18 A 21 ID Page 6 2008-09-01 SPD 07N20 G Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 1 mA parameter : ID = 4.5 A, VGS = 10 V SPD07N20 5.0 V 1.8 Ω 4.4 4.0 VGS(th) RDS(on) 1.4 1.2 3.6 max 3.2 2.8 1.0 2.4 0.8 typ 2.0 98% 1.6 0.6 min typ 1.2 0.4 0.8 0.2 0.0 -60 0.4 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 ˚C 100 200 160 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 4 10 2 pF SPD07N20 A 10 3 C IF 10 1 C iss 10 2 10 0 C oss Tj = 25 ˚C typ Tj = 150 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 40 VDS Rev. 2.4 Page 7 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 2008-09-01 SPD 07N20 G Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω VGS = f (QGate ) parameter: ID puls = 7 A SPD07N20 16 130 mJ V 110 100 12 VGS EAS 90 80 0,8 VDS max 0,2 VDS max 10 70 8 60 50 6 40 4 30 20 2 10 0 20 40 60 80 100 ˚C 120 0 160 Tj 0 4 8 12 16 20 24 28 nC 34 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD07N20 245 V V(BR)DSS 235 230 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 180 Tj Rev. 2.4 Page 8 2008-09-01 SPD 07N20 G Package outline: PG-TO252-3 Rev. 2.4 Page 9 2008-09-01 SPD 07N20 G Rev. 2.4 Page 10 2008-09-01