BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package 3=S SOT23 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current IGSM 10 mA Total power dissipation, TS 76 °C Ptot 200 mW Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 Rthchs 370 °C Thermal Resistance Channel - soldering point1) K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-08-2002 BF999 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)DS 20 - - V(BR)GSS 6.5 - 12 IGSS - - 50 nA IDSS 5 - 18 mA - VGS (p) - - 2.5 V 14 16 - mS Cgss - 2.5 - pF Cdg - 25 - fF Cdss - 1 - pF Gp - 25 - dB F - 1 - DC characteristics Drain-source breakdown voltage V ID = 10 µA, - VGS = 4 V Gate-source breakdown voltage IGS = 10 mA, VDS = 0 Gate-source leakage current VGS = 5 V, VDS = 0 Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA AC characteristics Forward tranconductance gfs VDS = 10 V, I D = 10 mA Gate input capacitance VDS = 10 V, I D = 10 mA, f = 1 MHz Reverse tranfer capacitance VDS = 10 V, I D = 10 mA, f = 1 MHz Output capacitance VDS = 10 V, I D = 10 mA, f = 1 MHz Power gain VDS = 10 V, I D = 10 mA, f = 200 MHz Noise figure VDS = 10 V, I D = 10 mA, f = 200 MHz 2 Nov-08-2002 BF999 Total power dissipation Ptot = f(TS) Output characteristics ID = f (VDS) 300 25 ΙD P tot mW BF 999 EHT07308 mA VGS = 0.8 V 20 0.6 V 0.4 V 200 15 0.2 V 150 0V 10 100 -0.2 V -0.4 V 5 50 -0.6 V 0 0 20 40 60 80 100 120 °C 0 150 0 5 10 15 TS BF 999 20 V DS Gate transconductance gfs = f (VGS) 20 V Drain current ID = f (VGS) EHT07309 30 BF 999 EHT07310 ΙD g fs mS mA 15 20 10 10 5 0 -1 0 1 2 V 0 3 VGS -1 0 1 V 2 V GS 3 Nov-08-2002 BF999 Gate input capacitance Cgss = f (VGS ) BF 999 3 Cgss Output capacitance C dss = f (V DS) EHT07311 2.0 Cdss pF BF 999 EHT07312 pF 1.5 2 1.0 1 0.5 0 -2 -1 0 V 0.0 1 0 10 5 V VDS VGS Reverse transfer capacitance Gate input admittance y 11s Cdg = f (VDS) (common-source) 200 Cdg BF 999 15 EHT07313 14 BF 999 EHT07314 f = 800 MHz b 11s mS 12 fF 700 MHz 150 10 600 MHz 500 MHz 8 100 400 MHz 6 300 MHz 4 50 200 MHz 2 100 MHz 50 MHz 0 0 5 10 V 0 15 0 1 2 3 mS 4 g11s V DS 4 Nov-08-2002 BF999 Gate forward transfer admittance y21s Output admittance y 22s (common-source) (common-source) 0 b 21s BF 999 EHT07315 5 BF 999 EHT07316 f = 800 MHz b 22s mS 50 MHz mS 100 MHz 700 MHz 4 600 MHz -5 200 MHz 3 500 MHz 300 MHz 400 MHz 2 400 MHz 300 MHz -10 500 MHz 200 MHz 600 MHz 1 700 MHz 100 MHz f = 800 MHz -15 4 6 50 MHz 8 10 12 0 14 mS 16 g 21s 0.1 0 0.2 0.3 0.4 mS 0.5 g 22s Test circuit for power gain and noise figure f = 200 MHz Input 60 Ω 1 nF 1 nF 15 pF Output 60 Ω 15 pF BB515 BB515 Dr 270 kΩ VG1S 270 k Ω 1 nF Vtun 270 k Ω Vtun 1 nF VDS EHM07024 5 Nov-08-2002