Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure BF 996 S Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BF 996 S MH Q62702-F1021 S SOT-143 D G2 G1 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate 1/gate 2 peak source current ± 10 Total power dissipation, TA < 76 ˚C Ptot 200 Storage temperature range Tstg – 55 … + 150 ˚C Channel temperature Tch 150 Rth JS < 370 IG1/2SM mW Thermal Resistance Junction - soldering point 1) K/W For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BF 996 S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VG1S = – VG2S = 4 V V(BR) DS 20 – – Gate 1 source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR) G1SS 8.5 – 14 Gate 2 source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR) G2SS 8.5 – 14 Gate 1 source leakage current ± VG1S = 5 V, VG2S = VDS = 0 ± IG1SS – – 50 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS – – 50 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V IDSS 2 – 20 mA Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA – VG1S (p) – – 2.5 V Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA – VG2S (p) – – 2.0 Semiconductor Group 2 V nA BF 996 S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Forward transconductance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz gfs 15 18 – mS Gate 1 input capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cg1ss – 2.3 – pF Gate 2 input capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cg2ss – 1.1 – Feedback capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cdg1 – 25 – fF Output capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cdss – 0.8 – pF Power gain VDS = 15 V, ID = 10 mA f = 200 MHz, GG = 2 mS, GL = 0.5 mS (test circuit 1) Gps – 25 – dB Power gain VDS = 15 V, ID = 10 mA f = 800 MHz, GG = 2.5 mS, GL = 0.8 mS (test circuit 2) Gps – 18 – Noise figure VDS = 15 V, ID = 10 mA f = 200 MHz, GG = 2 mS, GL = 0.5 mS (test circuit 1) F – 1 – Noise figure VDS = 15 V, ID = 10 mA f = 800 MHz, GG = 2.5 mS, GL = 0.8 mS (test circuit 2) F – 1.8 – Gain control range VDS = 15 V, VG2S = 4 … – 2 V, f = 800 MHz (test circuit 2) ∆ Gps 40 – – Semiconductor Group 3 BF 996 S Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS) VG2S = 4 V Gate 1 forward transconductance gfs1 = f (VG1S) VDS = 15 V, IDSS = 10 mA, f = 1 kHz Gate 1 forward transconductance gfs1 = f (VG2S) VDS = 15 V, IDSS = 10 mA, f = 1 kHz Semiconductor Group 4 BF 996 S Drain current ID = f (VG1S) VDS = 15 V Gate 1 input capacitance Cg1ss = f (VG1S) VG2S = 4 V, VDS = 15 V IDSS = 10 mA, f = 1 MHz Gate 2 input capacitance C g2ss = f (VG2S) VG1S = 0 V, VDS = 15 V IDSS = 10 mA, f = 1 MHz Output capacitance Cdss = f (VDS) VG1S = 0 V, VG2S = 4 V IDSS = 10 mA, f = 1 MHz Semiconductor Group 5 BF 996 S Power gain Gps = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 200 MHz (see test circuit 1) Noise figure F = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 200 MHz (see test circuit 1) Power gain Gps = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 800 MHz (see test circuit 2) Noise figure F = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 800 MHz (see test circuit 2) Semiconductor Group 6 BF 996 S Gate 1 input admittance y11s VDS = 15 V, VG2S = 4 V (common source) Gate 1 forward transfer admittance y21s VDS = 15 V, VG2S = 4 V (common source) Output admittance y22s VDS = 15 V, VG2S = 4 V (common source) Semiconductor Group 7 BF 996 S Test circuit 1 for power gain and noise figure f = 200 MHz, GG = 2 mS, GL = 0.5 mS Test circuit 2 for power gain, noise figure and cross modulation f = 800 MHz, GG = 2.5 mS, GL = 0.8 mS Semiconductor Group 8