Product Overview MJW21196: Bipolar Transistor, NPN, 250 V, 16 A For complete documentation, see the data sheet Product Description The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. Features • • • • • Total Harmonic Distortion Characterized High DC Current Gain –hFE = 20 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) VCEO(sus) Min hFE Min (V) hFE Max PTM Max (W) fT Min (MHz) Package Type MJW21196G Pb-free Active NPN 16 250 80 200 4 20 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-247-3