BF2030... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model Type Package Pin Configuration Marking BF2030 SOT143 1= S 2=D 3=G2 4=G1 - - NDs BF2030R SOT143R 1= D 2=S 3=G1 4=G2 - - NDs BF2030W SOT343 1= D 2=S 3=G1 4=G2 - - ND Maximum Ratings Parameter Symbol Value Drain-source voltage VDS Continuous drain current ID 20 Gate 1/ gate 2-source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 6 Total power dissipation Ptot 8 V mA V mW TS ≤ 76 °C, BF2030, BF2030R 200 TS ≤ 94 °C, BF2030W 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 1 Unit °C Apr-23-2004 BF2030... Thermal Resistance Parameter Symbol Channel - soldering point 1) Rthchs Value Unit K/W BF2030/ BF2030R ≤370 BF2030W ≤280 Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)DS 10 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 +IG2SS - - 50 IDSS - - 50 µA IDSX - 12 - mA VG1S(p) 0.3 0.5 - V VG2S(p) 0.3 0.6 - DC Characteristics Drain-source breakdown voltage V ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current nA VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Apr-23-2004 BF2030... Electrical Characteristics Symbol Parameter AC Characteristics Values Unit min. typ. max. 27 31 - mS Cg1ss - 2.4 2.8 pF Cdss - 1.3 - 20 23 - dB - 1.5 2.2 dB 40 50 - (verified by random sampling) Forward transconductance gfs VDS = 5 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Power gain Gp VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure F VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz ∆G p Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz 3 Apr-23-2004 BF2030... Total power dissipation Ptot = ƒ(TS) Total power dissipation Ptot = ƒ(TS) BF2030, BF2030R BF2030W 220 220 mA 180 180 160 160 P tot P tot mW 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 75 90 105 120 °C TS 150 TS Drain current ID = ƒ(IG1) Output characteristics ID = ƒ(V DS) VG2S = 4V VG2S = 4V VG1S = Parameter 20 28 mA mA 1.4V 24 16 22 1.3V 14 18 ID ID 20 16 12 1.2V 10 14 12 8 1.1V 10 8 6 6 4 1V 4 0 0 0.8V 2 2 10 20 30 40 50 60 70 80 µA 0 0 100 IG1 1 2 3 4 5 6 7 8 V 10 VDS 4 Apr-23-2004 BF2030... Gate 1 current IG1 = ƒ(V G1S) Gate 1 forward transconductance VDS = 5V g fs = ƒ(ID) VDS = 5V, VG2S = Parameter VG2S = Parameter 40 210 µA 4V mS 4V 180 3.5V 165 3V 30 135 g fs I G1 150 3V 120 25 2.5V 20 105 90 2.5V 60 2V 15 75 2V 10 45 30 5 15 0 0 0.4 0.8 1.2 1.6 2 V 2.4 0 0 3 4 8 12 16 24 mA 20 VDS Drain current ID = ƒ(VG1S) VDS = 5V Drain current ID = ƒ(V GG) VDS = 5V, VG2S = 4V, RG1 = 100kΩ VG2S = Parameter (connected to VGG, V GG=gate1 supply voltage) 30 mA 30 ID 13 mA 4V 11 24 10 3V 22 9 ID ID 20 18 7 16 2V 14 6 12 5 10 4 1.5V 8 3 6 2 4 1 2 0 0 8 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 0 0 2 VG1S 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGG 5 Apr-23-2004 BF2030... Drain current ID = ƒ(VGG) Crossmodulation Vunw = (AGC) VG2S = 4V VDS = 5 V RG1 = Parameter in kΩ 120 28 mA dBµV 70 24 80 22 ID V unw 110 20 100 18 120 16 105 100 14 12 95 10 8 90 6 4 85 2 0 0 1 2 3 4 5 6 V 80 0 8 10 VGG=VDS 20 30 40 dB 55 AGC Cossmodulation test circuit VAGC VDS 4n7 R1 10 kOhm 2.2 µH 4n7 4n7 RL 50 Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 6 Apr-23-2004