MCT5210 MCT5211 AlGaAs LED/ Phototransistor Optocoupler FEATURES • Current Transfer Ratio MCT5210, >70% at IF=3.0 mA MCT5211, >110% at IF=1.0 mA • Saturation CTR–MCT5211, >100% at IF=1.6 mA • High Isolation Voltage, 5300 VACRMS • Underwriters Lab File #E52744 • VDE #0884 Available with Option 1 DESCRIPTION The MCT5210/5211 are optocouplers with a high efficiency AlGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a double molded, six pin DIP package. Isolation test voltage is 5300 VACRMS. Because these parts have guaranteed CTRs at one and three mA, they are ideally suitable for interfacing from CMOS to TTL or LSTTL to TTL. They are also ideal for telecommunications applications such as ring or off-hook detection. Maximum Ratings Emitter Peak Reverse Voltage ............................................ 6 V Continuous Forward Current .............................40 mA Power Dissipation at 25°C................................. 75 mW Derate Linearly from 25°C .......................... 1.0 mW/°C Detector Collector-Emitter Breakdown Voltage.................... 30 V Emitter-Collector Breakdown Voltage...................... 7 V Collector-Base Breakdown Voltage....................... 70 V Power Dissipation............................................ 200 mW Derate Linearly from 25°C .......................... 2.6 mW/°C Package Isolation Test Voltage..............................5300 VACRMS Total Package Dissipation at 25°C Ambient (LED + Detector) .............. 260 mW Derate Linearly from 25°C .......................... 3.5 mW/°C Leakage Path ............................................. 7 mm min. Clearance Path............................................ 7 mm min. Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 ........................... 175 Isolation Resistance VIO=500 V, TA=25°C .................................... ≥1012 Ω VIO=500 V, TA=100°C .................................. ≥1011 Ω Operating Temperature ..................... –55°C to +100°C Storage Temperature......................... –55°C to +150°C Dimensions in inches (mm) pin one ID 3 2 1 Anode 1 6 Base Cathode 2 5 Collector NC 3 4 Emitter .248 (6.30) .256 (6.50) 4 5 6 .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (1.22) .052 (1.32) .039 (1.00) min. .130 (3.30) .138 (3.50) 18° 4° typ. .031 (.080) min. 3°–9° .031 (.80) .035 (.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. .010 (.25) typ. .300–.347 (7.62–8.81) .114 (2.90) .130 (3.30) Electrical Characteristics (25°C) Parameter Symbol Min. Typ. Max. Unit 1.2 1.5 Condition Emitter V IF=5 mA V IR=10 µA Forward Voltage VF Reverse Voltage VR 6 HFE 100 BVCEO 30 V IC=100 µA BVECO 7 V IE=100 µA BVCBO 70 V IE=10 µA nA VCE=10 V Detector 200 5 ICEO VCE=5 V IC=100 µA 100 Package (0–70°C) Saturated Current Transfer Ratio MCT5210 MCT5211 MCT5211 CTRCEsat CTRCEsat CTRCEsat VCE=0.4 V 60 100 75 120 200 150 % % % IF=3.0 mA IF=1.6 mA IF=1.0 mA 70 150 110 150 300 225 % % % IF=3.0 mA IF=1.6 mA IF=1.0 mA 0.4 0.6 0.5 % % % IF=3.0 mA IF=1.6 mA IF=1.0 mA VCE=5.0 V Current Transfer Ratio MCT5210 MCT5211 MCT5211 CTR CTR CTR VCE=4.3 V Collector-Base Current Transfer Ratio MCT5210 MCT5211 MCT5211 CTRCB CTRCB CTRCB 0.2 0.3 0.25 Saturation Voltage MCT5210 VCEsat 0.25 0.4 V IF=3.0 mA IC=1.8 mA MCT5211 VCEsat 0.25 0.4 V IF=1.6 mA IC=1.6 mA 1 Characteristics — continued Parameter Symbol Min. Typ. Max. Unit Condition Switching Characteristics (25°C) Propagation Delay —High to Low MCT5210 MCT5211 MCT5211 tPHL tPHL tPHL 10 20 40 µs µs µs RL=330 Ω, IF=3.0 mA, VCC=5.0 V RL=750 Ω, IF=1.6 mA, VCC=5.0 V RL=1.5 Ω, IF=1.0 mA, VCC=5.0 V 10 20 40 µs µs µs RL=330 Ω, IF=3.0 mA, VCC=5.0 V RL=750 Ω, IF=1.6 mA, VCC=5.0 V RL=1.5 Ω, IF=1.0 mA, VCC=5.0 V Propagation Delay —Low to High tPLH tPLH tPLH Figure 1. Forward current vs. forward voltage FORWARD VOLTAGE Figure 4. Collector base photocurrent vs. LED current S CU Icb - PHOTOCURRENT - µA 25 20 15 10 5 100 50 0 1.4 5 10 15 20 30 35 40 Figure 5. Photocurrent vs. LED current Icb - PHOTOCURRENT - µA Ta = 25°C 1 Figure 3. Switching waveform 1.4 0.6 TA = 25°C 0.4 0.2 0.0 0 5 10 15 20 25 IF - LED CURRENT - mA 30 35 1.0 Ta = 25°C 100 10 1 .1 1.1 1.2 1.3 VF - LED FORWARD VOLTAGE - V 0.8 Figure 8. Collector base current transfer ratio vs. LED current 1000 10 .1 1 10 100 IF - LED CURRENT - mA Figure 6. Switching schematic 0.8 0.6 TA = 25°C 0.4 0.2 0.0 .1 1 10 IF - LED CURRENT - mA 100 Figure 9. Current transfer ratio ratio vs. LED current 700 IF VCC = 5 V RL INPUT tD VO 25 IF - LED CURRENT - mA 100 IF - LED CURRENT - mA 150 0 1.1 1.2 1.3 VF - LED Forward Voltage - V Figure 2. LED forward current vs. forward voltage .1 1.0 Ta = 25°C 200 CTRcb - COLLECTOR BASE - CTR - % 0 1.0 250 tR tPLH tS 500 Vce 400 10 V 300 5V 2V 1V 0.4 V 200 VTH=1.5 V tPHL VOUT Ta = 25°C 600 RATIO - % IF - LED Current - mA Ta = 25°C 1.0 300 35 30 Figure 7. Collector base current transfer ratio vs. LED current CTRcb - COLLECTOR BASE - CTR - % MCT5210 MCT5211 MCT5211 100 .1 tF 2 1 10 IF - LED CURRENT - mA 100 MCT5210/5211 Figure 14. Transfer curve 100 Vce 10 V Ta = 25°C 70 IF - LED CURRENT - mA Ice - COLLECTOR CURRENT - mA 80 5V 60 50 2V 40 1V 30 0.4 V 20 10 5 10 15 20 IF - LED CURRENT - mA 25 600 Ice = Icb x HFE 10 500 400 1 300 200 .1 .1 100 1000 70 100 10 V 5V 2V 1V 0.4 V Vce Ta = 25°C PROPAGATION DELAY - µs Ice - COLLECTOR CURRENT - mA 1 10 100 Icb - PHOTOCURRENT - µA Figure 15. Propagation delay vs. base emitter resistor Figure 11. Collector current vs. LED current 10 1 60 Ta = 25°C tPLH 50 IF = 1mA 40 RL= 10K Vth = 1.5V Vce = 5V 30 tPHL 20 .1 .1 1 10 IF - LED CURRENT - mA 100 10 10 5 PROPAGATION DELAY - µs 700 Ta = 25°C 600 500 Vce 10 V 400 5V 300 2V 1V 200 0.4 V 1 10 100 Ib - BASE CURRENT - µA 700 Ice = Icb x HFE 1 600 .1 .1 1 10 100 Icb - PHOTOCURRENT - µA tPLH 30 RL= 4.7K Vth = 1.5V 20 Vce = 5V 10 tPHL 10 6 Rbe - BASE EMITTER RESISTOR - 10 7 40 PROPAGATION DELAY - µs 10 Ta = 25°C IF = 1.6mA Figure 17. Propagation delay vs. base emitter resistor 800 HFE - TRANSISTOR GAIN Vce =10V, Ta =25°C 40 0 10 5 1000 Figure 13. Transfer curve 100 10 7 50 800 100 .1 10 6 Rbe - BASE EMITTER RESISTOR - Figure 16. Propagation delay vs. base emitter resistor Figure 12. Transistor current gain vs. base current HFE - DC CURRENT GAIN - (Ice/Ib) 700 0 0 IF - LED CURRENT - mA Vce = 0.4V, Ta = 25°C HFE - TRANSISTOR GAIN Figure 10. Collector current vs. LED current 500 1000 35 30 tPLH 25 20 15 10 5 0 10 4 3 Ta = 25°C IF = 3mA RL= 3K Vth = 1.5V Vce = 5V tPHL 10 5 10 6 Rbe - BASE EMITTER RESISTOR - 10 7 MCT5210/5211