Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS™==Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS(on) in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω •=Periodic avalanche rated ID 11 A • Extreme dv/dt rated P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 •=High peak current capability •=Improved transconductance •=150 °C operating temperature Type Package Ordering Code Marking SPP11N60C3 P-TO220-3-1 Q67040-S4395 11N60C3 SPB11N60C3 P-TO263-3-2 Q67040-S4396 11N60C3 SPI11N60C3 P-TO262-3-1 Q67042-S4403 11N60C3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 11 TC = 100 °C 7 Pulsed drain current, tp limited by Tjmax ID puls 33 Avalanche energy, single pulse EAS 340 EAR 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 A Reverse diode dv/dt dv/dt 6 V/ns Gate source voltage static VGS ±20 Gate source voltage dynamic VGS ±30 Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +150 °C mJ ID =5.5A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 1) ID =11A, VDD =50V IS =11A, VDS <=VDD, di/dt=100A/µs, Tjmax =150°C Page 1 V 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - Linear derating factor - - 1 - - 260 °C V Soldering temperature, Tsold K/W W/K 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS 600 - - V(BR)DS - 700 - VGS(th) 2.1 3 3.9 VGS =0V, ID =0.25mA Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate threshold voltage, VGS = VDS ID = 0.5 mA Zero gate voltage drain current µA IDSS VDS = 600 V, VGS = 0 V, Tj = 25 °C - - 25 VDS = 600 V, VGS = 0 V, Tj = 150 °C - - 250 - - 100 Gate-source leakage current IGSS nA VGS =20V, VDS=0V Drain-source on-state resistance Ω RDS(on) VGS =10V, ID=7A, Tj=25°C - 0.34 0.38 VGS =10V, ID=7A, Tj=150°C - 1.1 1.22 - 0.86 - Gate input resistance RG f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 8.3 - S pF Characteristics Transconductance g fs V DS≥2*I D*R DS(on)max , ID=7A Input capacitance Ciss V GS=0V, V DS=25V, - 1460 - Output capacitance Coss f=1MHz - 610 - Reverse transfer capacitance Crss - 21 - - 45 - - 85 - Effective output capacitance, 1) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 2) Co(tr) time related Turn-on delay time t d(on) V DD=380V, V GS=0/10V, - 10 - Rise time tr ID=11A, R G=6.8Ω - 5 - Turn-off delay time t d(off) - 44 70 Fall time tf - 5 9 - 5.5 - - 22 - - 45 60 - 5.5 - pF ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =480V, ID =11A VDD =480V, ID =11A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =480V, ID =11A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - - 11 - - 33 Characteristics Inverse diode continuous IS TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD V GS=0V, I F=IS - 1 1.2 V Reverse recovery time trr V R=480V, I F=I S , - 400 600 ns Reverse recovery charge Qrr diF/dt=100A/µs - 6 - µC Peak reverse recovery current Irrm - 41 - A Peak rate of fall of reverse dirr /dt - 1200 - A/µs recovery current Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.015 Rth2 Cth1 0.0002121 0.034 Cth2 0.0007091 Rth3 0.056 Cth3 0.001184 Rth4 0.124 Cth4 0.00254 Rth5 0.143 Cth5 0.011 Rth6 0.057 Cth6 0.092 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2001-07-05 SPP11N60C3, SPB11N60C3 SPI11N60C3 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS ≥ 10 V SPP11N60C3 140 12 W A 120 SPP11N60C3 10 110 9 8 90 ID Ptot 100 80 7 70 6 60 5 50 4 40 3 30 2 20 1 10 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 160 TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC =25°C parameter : D = tp /T 10 °C 2 SPP11N60C3 10 1 SPP11N60C3 K/W tp = 13.0µs 10 0 on ) = ID V DS 10 1 Z thJC /I D A 10 -1 R DS ( 100 µs 10 -2 D = 0.50 0.20 10 0 1 ms 10 -3 0.10 0.05 10 ms 10 -4 0.02 single pulse 0.01 DC 10 -1 0 10 10 1 10 2 V 10 3 VDS 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 5 2001-07-05 SPP11N60C3, SPB11N60C3 SPI11N60C3 Preliminary data 5 Typ. output characteristic 6 Typ. output characteristic ID = f (VDS ); Tj=25°C ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 40 22 20V 10V 8V A 18 7V 32 6V 16 ID 28 ID 20V 8V 7V 7.5V A 6,5V 24 14 5.5V 12 20 6V 10 16 5V 8 5,5V 12 6 4.5V 8 4 0 0 3 6 9 12 15 18 21 5V 4 4,5V 2 4V 0 0 27 V VGS 5 10 15 25 V VDS 7 Typ. drain-source on resistance 8 Drain-source on-state resistance RDS(on) =f(ID ) RDS(on) = f (Tj ) parameter: Tj =150°C, VGS parameter : ID = 7 A, VGS = 10 V 2.1 2 SPP11N60C3 Ω Ω 1.8 4.5V 5V 6V 5.5V 1.6 RDS(on) R DS(on) 4V 1.4 1.6 1.4 1.2 1.2 1 0.8 1 0.6 0.8 98% 6.5V 8V 20V 0.6 0.4 0 0.4 2 4 6 8 10 12 14 typ 0.2 16 A 20 ID Page 6 0 -60 -20 20 60 100 °C 180 Tj 2001-07-05 SPP11N60C3, SPB11N60C3 SPI11N60C3 Preliminary data 9 Typ. transfer characteristics 10 Gate threshold voltage ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS(th) = f (Tj) parameter: tp = 10 µs parameter: VGS = VDS , ID = 0.5 mA 40 5 A V 25°C ID 28 24 150°C 3.5 2.5 16 2 12 1.5 8 1 4 0.5 2 4 6 8 10 12 typ. 3 20 0 0 max. 4 V GS(th) 32 min. 0 -60 V 15 VGS -20 20 60 100 °C 160 Tj 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD ) parameter: ID = 11 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPP11N60C3 V SPP11N60C3 A 0,2 VDS max 10 10 1 0,8 VDS max IF V GS 12 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 10 20 30 40 50 nC 70 QGate 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 7 2001-07-05 SPP11N60C3, SPB11N60C3 SPI11N60C3 Preliminary data 6.8 Typ. switching time 13 Typ. switching time t = f (ID), inductive load, Tj =125°C t = f (RG ), inductive load, Tj =125°C par.: VDS =380V, VGS=0/+13V, RG =6.8Ω par.: VDS =380V, VGS=0/+13V, ID=11 A 350 70 ns ns 60 td(off) 55 250 50 t t 45 200 40 td(off) td(on) tr tf 35 150 30 25 20 100 tf 15 td(on) 50 10 5 tr 0 0 2 4 6 8 0 0 12 A 10 20 30 40 50 Ω ID 70 RG 14 Typ. drain current slope 15 Typ. drain source voltage slope di/dt = f(RG ), inductive load, Tj = 125°C di/dt = f(RG ), inductive load, Tj = 125°C par.: VDS =380V, VGS=0/+13V, ID=11A par.: VDS =380V, VGS=0/+13V, ID=11A 130000 3000 V/ns A/µs 110000 dv/dt di/dt 100000 2000 90000 80000 70000 1500 60000 50000 1000 40000 di/dt(off) 500 dv/dt(off) 30000 20000 di/dt(on) dv/dt(on) 10000 0 0 20 40 60 80 Ω 120 RG 0 0 10 20 30 40 50 Ω 70 RG Page 8 2001-07-05 SPP11N60C3, SPB11N60C3 SPI11N60C3 Preliminary data 16 Typ. switching losses 17 Typ. switching losses E = f (ID ), inductive load, Tj=125°C E = f(RG ), inductive load, Tj =125°C par.: VDS =380V, VGS=0/+13V, RG =6.8Ω par.: VDS =380V, VGS=0/+13V, ID=11A 0.04 0.24 *) E on includes SDP06S60 *) Eon includes SDP06S60 diode commutation losses. mWs diode commutation losses. mWs 0.03 Eon* E E 0.16 0.025 0.02 0.12 Eoff 0.015 0.08 Eoff 0.01 0.04 Eon* 0.005 0 0 2 4 6 8 0 0 12 A 10 20 30 40 50 Ω ID 70 RG 18 Avalanche SOA 19 Avalanche energy IAR = f (tAR ) EAS = f (Tj ) par.: Tj ≤ 150 °C par.: ID = 5.5 A, VDD = 50 V 350 11 A mJ 9 250 E AS I AR 8 7 200 6 5 T j(START) =25°C 150 4 3 100 T j(START) =125°C 2 50 1 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR Page 9 0 20 40 60 80 100 120 °C 160 Tj 2001-07-05 SPP11N60C3, SPB11N60C3 SPI11N60C3 Preliminary data 20 Drain-source breakdown voltage 21 Avalanche power losses V(BR)DSS = f (Tj ) PAR = f (f ) parameter: EAR =0.6mJ SPP11N60C3 300 720 V 680 P AR V(BR)DSS W 660 200 640 150 620 100 600 580 50 560 540 -60 -20 20 60 100 °C 0 4 10 180 10 5 Tj 22 Typ. capacitances 23 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS ) MHz f 10 V 600 parameter: VGS =0V, f=1 MHz 10 4 7.5 µJ pF Ciss 6 10 3 C E oss 5.5 5 4.5 4 10 2 Coss 3.5 3 2.5 10 1 2 Crss 1.5 1 0.5 10 0 0 100 200 300 400 V 600 VDS 0 0 100 200 300 400 VDS Page 10 2001-07-05 6 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Definition of diodes switching characteristics Page 11 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO220-3-1 P-TO220-3-1 dimensions [mm] symbol [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 2.54 typ. 4.30 4.50 0.1 typ. 0.1693 0.1772 P T 1.17 2.30 0.0461 0.0906 1.40 2.72 0.0551 0.1071 TO-263 (D²Pak/P-TO220SMD) dimensions symbol A [inch] min max min max 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.65 0.85 0.1 typ. 0.0256 0.0335 5.08 typ. 4.30 4.50 0.2 typ. 0.1693 0.1772 F G H Page 12 [mm] K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N P 15 typ. 0.00 0.20 0.5906 typ. 0.0000 0.0079 Q 4.20 0.1654 R S 8° max 2.40 3.00 8° max 0.0945 0.1181 T 0.40 0.0157 5.20 0.60 0.2047 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y Z 9.40 0.3701 16.15 0.6358 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 Page 13 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 14 2001-07-05