Product Overview TIP110: Medium Power NPN Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary devices. Features • High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc • Collector-Emitter Sustaining Voltage @ 30 mA VCEO(sus) = 60 Vdc (Min) TIP110, TIP115 VCEO(sus) = 80 Vdc (Min) TIP111, TIP116 VCEO(sus) = 100 Vdc (Min) TIP112, TIP117 • Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc • Monolithic Construction with Built-In Base-Emitter Shunt Resistors • Compact TO-220 AB Package • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type TIP110G Pb-free Active NPN 2 60 2.5 0.5 - 25 TO-220-3 TIP111G Pb-free Active NPN 2 80 2.5 0.5 - 25 TO-220-3 TIP112G Pb-free Active NPN 2 100 2.5 0.5 - 25 TO-220-3 TIP115G Pb-free Active PNP 2 60 2.5 0.5 - 25 TO-220-3 TIP116G Pb-free Active PNP 2 80 2.5 0.5 - 25 TO-220-3 TIP117G Pb-free Active PNP 2 100 2.5 0.5 - 25 TO-220-3 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016