APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits 28 27 26 25 • • 20 19 18 23 22 29 16 30 15 31 14 32 • • • • Direct mounting to heatsink (isolated package) easy series and parallels combinations for power and voltage improvements Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant 13 2 3 4 7 8 10 11 12 Pins 13/14 ; 29/30 ; 31/32 must be shorted together Absolute maximum ratings (per leg) ID IDM VGS RDSon PD Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation n Tc = 25°C Tc = 80°C Tc = 25°C Max ratings 1000 20 14 74 ±30 630 520 Unit V A V mΩ W n In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–3 APTML1002U60R020T3AG – Rev 0 November, 2009 Symbol VDSS APTML1002U60R020T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VDS = 1000V ; VGS = 0V Tj = 25°C VDS = 800V ; VGS = 0V Tj = 125°C VGS = 10V, ID = 10A VGS = VDS, ID = 2.5mA VGS = ±30 V Typ Max 250 1000 630 4 ±100 Unit Typ 6000 775 285 Max Unit Typ 20 2 Max 600 2 µA mΩ V nA Dynamic Characteristics (per leg) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min pF Shunt Electrical Characteristics (per leg) Symbol Characteristic Resistance value Rsh Tsh Tolerance Psh Load capacity Ish Current capacity Min TC=25°C TC=80°C TC=25°C TC=80°C 20 10 31 22 Unit mΩ % W A Temperature sensor PTC Symbol R25 R100/R25 R-55/R25 B Characteristic Resistance @ 25°C Resistance ratio Resistance ratio Temperature coefficient Min 1980 1.676 0.48 Tamb=100°C & 25°C Tamb=-55°C & 25°C Typ 1.696 0.49 7900 Max 2020 1.716 0.50 Unit Ω ppm/K Thermal and package characteristics Characteristic Junction to Case Thermal Resistance Min MOSFET (per leg) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 4000 -40 -40 -40 2.5 Typ Max 0.24 150 125 100 4.7 110 Unit °C/W V °C N.m g 2–3 APTML1002U60R020T3AG – Rev 0 November, 2009 Symbol RthJC VISOL TJ TSTG TC Torque Wt APTML1002U60R020T3AG SP3 Package outline (dimensions in mm) 28 17 1 12 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3–3 APTML1002U60R020T3AG – Rev 0 November, 2009 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com