MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency. The MS2552 is housed in the industry-standard AMPAC metal/ceramic hermetic package with internal input/output matching structures. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1 Capability Input/Output Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 325 W Min. GP = 6.7 dB Gain W W W. Microsemi .COM The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS Avionics Applications Symbol PDISS IC VCC TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Parameter Power Dissipation* (T C ≤ 100°C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature Value 880 24 55 250 -65 to +150 Unit W A V °C °C 0.17 °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance Applies only to rated RF amplifier operation MS2552 Copyright 2000 MSC1665.PDF 2001-01-20 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW Symbol BVCBO BVEBO BVCER ICES hFE Test Conditions IC = 10 mA IE = 1 mA IC = 25 mA VBE = 0 V VCE = 5 V Min. 65 3.5 65 IE = 0 mA IC = 0 V RBE = 10 Ω vCE = 50 V IC = 1 A MS2552 Typ. Max. 25 120 15 Units V V V mA W W W. Microsemi .COM STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C) DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C) Symbol POUT ηc GP Note: Test Conditions f = 1025 – 1150 MHz PIN = 70 W f = 1025 – 1150 MHz PIN = 70 W f = 1025 – 1150 MHz PIN = 70 W VCC = 50 V VCC = 50 V VCC = 50 V Min. 325 40 6.7 MS2575 Typ. 360 41 7.1 Max. Units W % dB Pulse width = 10µSec Duty Cycle = 1% ELECTRICALS Copyright 2000 MSC1665.PDF 2001-01-20 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 2 MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW W W W. Microsemi .COM PACKAGE DATTA Copyright 2000 MSC1665.PDF 2001-01-20 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 3 MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW W W W. Microsemi .COM NOTES Copyright 2000 MSC1665.PDF 2001-01-20 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 4