BSS119 Rev. 1.3 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information Marking BSS119 PG-SOT23 Yes L6327: 3000 pcs/reel sSH Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C 0.17 TA=70°C 0.13 I D puls 0.68 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 0.36 W -55... +150 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS=0.17A, VDS=80V, di/dt=200A/µs, Tjmax=150°C TA=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2006-12-01 BSS119 Rev. 1.3 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 350 Characteristics Thermal resistance, junction - ambient RthJS K/W at minimal footprint Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 1.3 1.8 2.3 Static Characteristics Drain-source breakdown voltage V VGS=0, ID =250µA Gate threshold voltage, VGS = VDS ID=50µA Zero gate voltage drain current µA I DSS VDS=100V, VGS=0, Tj=25°C - 0.05 0.1 VDS=100V, VGS=0, Tj=150°C - 0.5 5 I GSS - 10 100 nA RDS(on) - 4.9 10 Ω RDS(on) - 3.4 6 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.13 A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2006-12-01 BSS119 Rev. 1.3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.08 0.17 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.13A Input capacitance Ciss VGS=0, VDS=25V, - 60 78 Output capacitance Coss f=1MHz - 8.6 11.2 Reverse transfer capacitance Crss - 3.1 4.1 Turn-on delay time td(on) VDD=50V, VGS=10V, - 2.7 4 Rise time tr ID=0.17A, RG=6Ω - 3.1 4.6 Turn-off delay time td(off) - 9.3 14 Fall time tf - 27 40 - 0.08 0.12 - 0.76 1.1 - 1.67 2.5 V(plateau) VDD =80V, ID = 0.17 A - 3.4 - V IS - - 0.17 A - - 0.68 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD =80V, ID =0.17A VDD =80V, ID =0.17A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS=0, IF = IS - 0.8 1.2 V Reverse recovery time trr VR=50V, I F=lS , - 21.7 32.5 ns Reverse recovery charge Qrr diF/dt=100A/µs - 10 15 nC Page 3 2006-12-01 BSS119 Rev. 1.3 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ≥ 10 V 0.38 BSS119 BSS119 0.18 W A 0.32 0.14 0.12 0.24 ID P tot 0.28 0.1 0.2 0.08 0.16 0.12 0.06 0.08 0.04 0.04 0.02 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 10 °C 1 BSS119 10 3 BSS119 K/W A 10 2 0 /ID ID = RD S n (o V tp = 240.0µs DS Z thJA 10 1 ms ) 10 -1 10 1 10 0 10 ms D = 0.50 0.20 10 -1 0.10 0.05 10 -2 0.02 10 -2 DC 10 -3 0 10 10 1 0.01 single pulse 10 2 V 10 3 VDS 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2006-12-01 BSS119 Rev. 1.3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 0.34 12 3.4V 3.8V 4V 4.6V 4.8V 5V 6V 7V 10V Ω 7V 6V 0.28 5V 4.8V 4.6V 0.24 4V 3.8V 0.2 3.4V 10 R DS(on) ID A 10V 9 8 7 6 0.16 5 0.12 4 3 0.08 2 0.04 1 0 0 0.5 1 1.5 2 0 0 3 V 0.04 0.08 0.12 0.16 0.2 0.24 0.28 A ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.34 0.3 S A 0.28 0.24 0.22 gfs 0.24 ID 0.34 0.2 0.2 0.18 0.16 0.16 0.14 0.12 0.12 0.1 0.08 0.08 0.06 0.04 0.04 0.02 0 0 0.8 1.6 2.4 3.2 4.4 V VGS Page 5 0 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 A 0.34 ID 2006-12-01 BSS119 Rev. 1.3 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.17 A, VGS = 10 V parameter: VGS = VDS ; ID =50µA 24 BSS119 2.6 Ω V 98% 2.2 18 V GS(th) R DS(on) 20 16 14 2 12 1.6 10 1.4 8 98% typ. 1.8 2% 1.2 6 1 4 typ 0.8 2 0 -60 -20 20 60 100 °C 0.6 -60 180 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 0 A pF 2 10 -1 Ciss C IF 10 BSS119 Coss 10 1 10 -2 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 V 30 VDS 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2006-12-01 BSS119 Rev. 1.3 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG ); parameter: VDS , V(BR)DSS = f (Tj) ID = 0.17 A pulsed, Tj = 25 °C 16 BSS119 BSS119 120 V V (BR)DSS V V GS 12 10 0.2 VDS max 8 6 114 112 110 108 106 0.5 VDS max 104 0.8 VDS max 102 100 98 4 96 94 2 92 0 0 0.4 0.8 1.2 1.6 2 nC 2.6 QG 90 -60 -20 20 60 100 °C 180 Tj Page 7 2006-12-01 BSS119 Rev. 1.3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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