BB 811 Silicon Variable Capacitance Diode ● BB 811 Frequency range up to 2 GHz; special design for use in TV-sat indoor units Type Marking Ordering Code (tape and reel) BB 811 white T Q62702-B478 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30 V Forward current, TA ≤ 60 ˚C IF 20 mA Operating temperature range Top – 55 … + 125 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ Thermal Resistance Junction - ambient 1) 450 K/W For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 811 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – – – 20 500 7.8 0.85 8.8 1.02 9.8 1.2 Reverse current VR = 30 V VR = 30 V, TA = 85 ˚C IR nA Diode capacitance, f = 1 MHz VR = 1 V VR = 28 V CT Capacitance ratio f = 1 MHz, VR = 1 V/28 V CT1 CT28 7.8 8.6 9.5 – Series resistance f = 100 MHz, CT = 9 pF rS – 1 – Ω Case capacitance f = 1 MHz CC – 0.1 – pF Capacitance matching f = 1 MHz, VR = 0.5 … 28 V ∆CT – – 3 % Series inductance LS – 2.8 – nH pF CT Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2