SINGLE EVENT EFFECTS TEST REPORT PRODUCT: AD8229 DIE TYPE: 8YK90 DATE CODE: 1132 CASE TEMPERATURE: SEL: 125⁰C SET: 25⁰C EFFECTIVE LET: SEL: (3.5 – 91.5) MeV‐cm2/mg SET: (3.5 – 58.8) MeV‐cm2/mg TOTAL EFFECTIVE FLUENCE: SEL: 1e7 Ions/cm2 SET: (3.87E4 – 1E6) ion/cm2 FACILITIES: Lawrence Berkeley National Laboratories TESTED: November, 2012 The RADTESTSM DATA SERVICE is a compilation of radiation test results on Analog Devices’ Space grade products. It is designed to assist customers in selecting the right product for applications where radiation is a consideration. Many products manufactured by Analog Devices, Inc. have been shown to be radiation tolerant to most tactical radiation environments. Analog Devices, Inc. does not make any claim to maintain or guarantee these levels of radiation tolerance without lot qualification test. It is the responsibility of the Procuring Activity to screen products from Analog Devices, Inc. for compliance to Nuclear Hardness Critical Items (HCI) specifications. WARNING: Analog Devices, Inc. does not recommend use of this data to qualify other product grades or process levels. Analog Devices, Inc. is not responsible and has no liability for any consequences, and all applicable Warranties are null and void if any Analog product is modified in any way or used outside of normal environmental and operating conditions, including the parameters specified in the corresponding data sheet. Analog Devices, Inc. does not guarantee that wafer manufacturing is the same for all process levels. Page:1
SING
GLE EVENT EFFFECTS TEST REPORT
T T
Test Type: H
Heavy Ion T
Test facility: L
LBNL / BASE T
Test Date: N
November 20
12 P
Part Type: A
AD8229 P
Part Descripti
on: 1 nV/√Hz Low
1
w Noise
2
210°C Instrum
mentation Amp
plifier P
Part Manufac
turer: A
Analog Device
es 399090 dated
d 9/25/2012 Analog Devicces Purchase Order No 453
ence : HRX/SEEE/0430 Isssue : 01
Hirex refere
Written b
by : M. Kad
ddour Desiggn Engineer Authorized
d by: F.X. Gu
uerre Stud
dy Manager Date : June 19, 2013
HIIREX Engineering SAS au capital de 180 000 € - RCS Toulou
use B 389 715 5
525
s - 31520 Toulou
use
Siège social: 2 rue des Satellites
Page:2
Hirex Engin
neering SEE Te
est Report
Ref. : Issue : HRX/SSEE/0430 01 RESSULTS SUMMARY Facility Test date Device descrription LBNL / BASE November 20
012 Partt type: AD8
8229 Description: 1 nV
V/√Hz Low Noise 210°°C Instrumenttation Amplifiier Packkage: SBDIP‐8 leads Die dimensions: 1.692 mm x 2
2.801 mm SEE Results Four samples havve been exposed over a LET range from 3.5 to 58.8 M
MeV/(mg/cm²²) at room tem
mperature forr SET and at 125°C for SEL characterizations.
SEL Results up to a LET of 9
91.5 MeV/(mg/cm2) with V
V =+/‐17V biass conditions aand at 125°C.
Devvice is not senssitive to SEL u
SET Results SET events were detected at any tested LET. mptotic SET cross‐section // channel is ab
bout 3 10‐03 cm
m2 while LET tthreshold is beelow 3.5 MeV
V/(mg/cm2) Asym
Worrst case ampliitude with Xen
non (Let=58.8
8) is about 13.1V while worsst case duration is around 2
2.6µs. HRX/SEE//0430 Issue 01
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Hirex Engineering SEE Test Report W
xo
A
s
35
2.75
3.00E‐03
1.75
Ref. : Issue : HRX/SEE/0430 01 (see 6 for Weibull parameter definition) HRX/SEE/0430 Issue 01
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Hirex Engineering Ref. : Issue : SEE Test Report HRX/SEE/0430 01 DOCUMENTATION CHANGE NOTICE Issue Date Page 01 19/06/2013 All Contributors to this work: Mehdi Kaddour Laetitia Barrau FX Guerre HRX/SEE/0430 Issue 01
Change Item
Hirex Engineering
Hirex Engineering
Hirex Engineering
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Hirex Engineering SEE Test Report Ref. : Issue : HRX/SEE/0430 01 SEE TEST REPORT TABLE OF CONTENTS 1 INTRODUCTION .................................................................................................................................................... 6 2 APPLICABLE AND REFERENCE DOCUMENTS ............................................................................................. 6 2.1 2.2 3 DEVICE INFORMATION ...................................................................................................................................... 7 3.1 3.2 3.3 4 APPLICABLE DOCUMENTS ................................................................................................................................... 6 REFERENCE DOCUMENTS .................................................................................................................................... 6 DEVICE DESCRIPTION .......................................................................................................................................... 7 SAMPLE IDENTIFICATION ..................................................................................................................................... 7 STACK CONSTRUCTION ANALYSIS ...................................................................................................................... 8 TEST SET-UP ........................................................................................................................................................... 9 4.1 DEVICE CONFIGURATION ................................................................................................................................... 10 4.2 LBNL ................................................................................................................................................................ 11 4.2.1 Beam ......................................................................................................................................................... 11 4.2.2 Dosimetry ................................................................................................................................................. 11 4.2.3 Used ions .................................................................................................................................................. 11 5 SEE TEST RESULTS ............................................................................................................................................ 12 5.1 5.2 6 SET ................................................................................................................................................................... 12 SEL ................................................................................................................................................................... 13 GLOSSARY ............................................................................................................................................................ 16 LIST OF FIGURES Figure 1: Device identification for the AD8229 part ............................................................................................... 7 Figure 2: Material identification and thickness measures for the AD8229 part ........................................................ 8 Figure 3: Die microsection for the AD8229 part ..................................................................................................... 8 Figure 4: Heavy Ion test set‐up ............................................................................................................................. 9 Figure 5: SET detection for the dynamic input ....................................................................................................... 9 Figure 6: The AD8229 configuration .................................................................................................................... 10 Figure 7 – Photo of daughter board with 4 samples prepared for testing ................................................................ 10 Figure 8 – LBNL, 88 inches cyclotron, 10MeV/nucleon cocktail............................................................................... 11 Figure 9: SET X‐section / dut for the AD8229 part; LBNL, NOV12 .......................................................................... 12 Figure 10: SET X‐section/device, Weibull fit for the AD8229 part; LBNL, NOV12 .................................................... 13 Figure 11: RUN010, Xenon, process of a typical SET event record........................................................................... 14 Figure 12 – Xenon, SET envelop and worst cases (amplitude and duration) for DUT1 to DUT4 .................................. 15 LIST OF TABLES Table 2: LBNL ions and features thereof ......................................................................................................... 11 Table 3: SET run details for the AD8229 part; LBNL, NOV 2012 ............................................................... 12 HRX/SEE/0430 Issue 01
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Hirex Engineering 1
SEE Test Report Ref. : Issue : HRX/SEE/0430 01 Introduction This report presents the results of Heavy Ion test program carried out on Analog Devices 1 nV/√Hz Low Noise 210°C Instrumentation Amplifier AD8229. Four parts were heavy ion tested at LBNL / BASE, Berkeley, USA in November 2012. This work was performed for Analog Devices Purchase Order No 45399090, dated 09/25/2012. 2
Applicable and Reference Documents Applicable Documents 2.1
AD‐1.
AD‐2.
AD‐3.
1 nV/√Hz Low Noise 210°C Instrumentation Amplifier AD8229 datasheet; 2002 Revision B 2/12 Hirex proposal HRX/PRO/4032 Issue 02, dated September 14, 2012 2.2
Reference Documents RD‐1.
RD‐2.
HRX/SEE/0430 Issue 01
Single Event Effects Test method and Guidelines ESA/SCC basic specification No 25100 The Berkeley Accelerator Space Effects (BASE) Facility, Proceedings of the Space Nuclear Conference 2005, San Diego, California, June 5‐9, 2005 Page:7
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Hirex Engineering 3
3.1
SEE Test Report Ref. : Issue : HRX/SEE/0430 01 DEVICE INFORMATION Device description The AD8229 is a 1 nV/√Hz Low Noise 210°C Instrumentation Amplifier in a SBDIP ceramic package. AD8229 Part Type: Analog Devices Manufacturer: SBDIP‐8 leads Package: Tested samples: HRX s/n #01, #02, #03, #4 logo AD8229HDZ #1132 E194959 Top Marking: Die dimensions: 1.692 mm x 2.801 mm AG62661.9 Manufacturer lot # 3.2
Sample identification Analog Devices has delivered 10 AD8229 samples. Eight of them were prepared for heavy ions testing. Photo 1 ‐ Top Marking (AD8229) Photo 2 – Bottom marking (AD8229) Photo 3 – Die full view (AD8229) Photo 4 – Die marking 1 (AD8229) Figure 1: Device identification for the AD8229 part HRX/SEE/0430 Issue 01
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lly
na
nt
io
te
In
ft
Le
Bl
an
k
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Hirex Engineering 4
Ref. : Issue : SEE Test Report HRX/SEE/0430 01 Test Set‐up Figure 4 shows the principle of the Heavy Ion test system. The test system is based on a Virtex5 FPGA (Xilinx). It runs at 50MHz. The test board has 168 I/Os which can be configured using several I/O standards. The test board includes the voltage/current monitoring and the latch‐up management of the DUT power supplies up to 16 independent channels. The communication between the test chamber and the controlling computer is effectively done by a 100 Mbit/s Ethernet link which safely enables high speed data transfer. Hirex 4‐Channel digitizer allows monitoring the DUT outputs. The events are captured and stored. Recorded data provide information on SET amplitude (high level, low level) and width distribution (shape). Chamber Wall
External to Chamber
Internal to Chamber
Temperature
Control system
Voltage/Current
Monitoring
External Power
Supplies
COMPUTER
Graphical
User
Interface
LAN
Signal
Generator
I/O
Interface
VIRTEX 5
FPGA
8-Chanel, 16-Bit
Digitizer
DUTs
BEAM COUNTER
Figure 4: Heavy Ion test set‐up SET A dynamic signal, i.e. a sine wave ‐1v/+1V at 100kHz v is applied at DUT input. A subtraction operation is executed between each output sample from the present period and equivalent sample from the previous period. If the result of subtraction exceeds 12 LSB (detection threshold), then an error is detected and output recording is triggered. (1 LSB =36mV) n sample from the previous period
n sample from the present period
12 LSB
dynamic output signal
previous period present period
Figure 5: SET detection for the dynamic input SEL SEL detection is performed by monitoring the DUT supply currents. When a SEL occurs (typically over 100mA during at least 2 milliseconds), then device is switched off during 1 second, and the SEL event is registered in the log file. Input signal is also put in tri‐state to avoid feeding the eventual SEL via the input. The SEL threshold can be adjusted during the test, but in general it is adjusted before starting the test. During all irradiation time, the supply currents as well as inputs currents of each DUT are monitored. HRX/SEE/0430 Issue 01
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Hirex Engineering 4.1
SEE Test Report Ref. : Issue : HRX/SEE/0430 01 Device configuration The device configuration is as follows: • Input: Sine wave ‐1v/+1V at 100 KHz • Supply voltage for SET: ±15V • Supply voltage for SEL: ±17V at 85°C and 125°C • Gain = 2 • Resistance load = 10k Ohm Due to the feedback resistor of 10kOhm, the overall gain value is 2/3. Device schematic is presented in Figure 6. Bias Pinout Figure 6: The AD8229 configuration 4 samples are mounted on a daughter board so that the 4 DUTs can be exposed and tested at the same time (see Figure 7). 2 boards were prepared for the test campaign. Figure 7 – Photo of daughter board with 4 samples prepared for testing HRX/SEE/0430 Issue 01
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Hirex Engineering SEE Test Report Ref. : Issue : HRX/SEE/0430 01 LBNL 4.2
A complete description of the facility (BASE) is given in RD‐2. 4.2.1
Beam 10 MeV/amu cocktail was used for this experiment. Runs were performed with selected following ions, Ne, Ar, Cu, Kr and Xe. All tests were done at room temperature for SET and at 125°C for SEL testing. 4.2.2
Dosimetry The current BASE dosimetry system and procedures were used. Record of the beam count with Hirex hardware was not possible. 4.2.3
Used ions The LBNL ions used are listed in the table below (10MeV/nucleon cocktail, see Figure 8). Ion Energy Ne Ar Cu Kr Xe 216.28 400 659.19 906.45 1232.55 LET Range at DUT surface 3.49 174.6 9.74 130.1 21.17 108 30.23 113.1 58.78 90 Table 1: LBNL ions and features thereof Figure 8 – LBNL, 88 inches cyclotron, 10MeV/nucleon cocktail HRX/SEE/0430 Issue 01
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Hirex Engineering 5
Ref. : Issue : SEE Te
est Report
HRX/SSEE/0430 01 SEEE Test Resullts Four samples havve been expossed at the sam
me time over aa LET range from 3.49 to 58
8.7 MeV/(mg//cm²) at room
m mperature for SSET and at 125°C for SEL ch
haracterization
n. tem
Detaailed results p
per run are preesented in Table 2. SET 5.1
SET events were detected at any tested LET. The correspondin
ng SET cross‐section per output channel is shown in Fiigure 9. wn in Figure 1
10 as well as W
Weibull fit parrameters. Weiibull fit is show
Figure 9: SET X‐section / dut for tthe AD8229 p
part; LBNL, NO
OV12 X‐section
/DUT4
X‐section /DUT
4
467
2141
3117 190
3
3
337
457
4
402
157
9
960
40
1
1103
9066
4
413
24213
X‐section
/DUT3
1.00E+06
5.93E+05
1.54E+05
6.30E+04
3.87E+04
1.00E+07
1.00E+07
X‐section
X
section
/DUT2
Fluence
3.49
9.74
21.2
30.9
58.8
58.8
91.5
X‐section
DUT1
Eff. LET
0
0
0
0
0
0
50
Total
tilt
3.49
9.74
21.2
30.9
58.8
58.8
58.8
ch4
LET
Ne
Ar
Cu
Kr
Xe
Xe
Xe
0 3 1 3 2
0 76 139 100 80
0 1
123 122 147 124
0 99 115 101 87
0 104
1 101 104 105
0 ‐
‐
‐
‐
0 ‐
‐
‐
‐
9
395
516
402
414
‐
‐
3.00E‐06
1.28E‐04
7.99E‐04
1.57E‐03
2.69E‐03
‐
‐
1.0
00E‐06
2.3
34E‐04
7.9
92E‐04
1.8
83E‐03
2.6
61E‐03
‐
‐
3.00E‐06
1.69E‐04
9.55E‐04
1.60E‐03
2.69E‐03
‐
‐
2.00E‐06
2
1
1.35E‐04
8
8.05E‐04
1
1.38E‐03
2
2.71E‐03
‐
‐
2.25E‐06
1.67E‐04
8.38E‐04
1.60E‐03
2.67E‐03
‐
‐
ch3
ion
Roo
om
Roo
om
Roo
om
Roo
om
Roo
om
12
25
12
25
ch2
Temp (°C)
Temp (
C)
1.00E+05
1.00E+05
1.00E+05
1.00E+05
1.00E+05
1.00E+05
1.00E+05
ch1
Sine wave (Hz)
+//‐1
+//‐1
+//‐1
+//‐1
+//‐1
+//‐1
+//‐1
SEL
V i (V)
Vccin (V)
+/‐15
+/‐15
+/‐15
+/‐15
+/‐15
+/‐17
+/‐17
average
flux
Vcc (V)
run007
run006
run005
run008
run010
run011
run012
Duration
run #
Table 2: SEET run details for the AD8229 part; LBNLL, NOV 2012 HRX/SEE//0430 Issue 01
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Hirex Engineering SEE Te
est Report
Ref. : Issue : HRX/SSEE/0430 01 W
xo
A
s
35
2.75
3.00E‐03
1.75
(see 6
6 for Weibull p
parameter deefinition) Figure
e 10: SET X‐secction/device, Weibull fit fo
or the AD8229
9 part; LBNL, NOV12 5.2
SEL No SSEL has been detected at a LET of 58.8 and 91.5 MeV//(mg/cm²) and
d a fluence off 1 10+07ions / cm² at a DUTT temperaturee of 125°C. HRX/SEE//0430 Issue 01
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Hirex Engineering Ref. : Issue : SEE Te
est Report
HRX/SSEE/0430 01 Figu
ure 11 presentt the way an SSET is processed. Amp
plitude is giveen in LSBs. 1 LSSB is 36mV. Figu
ure 12 presentts the SET envvelop with Xen
non (58 MeV//mg/cm²) for tthe 4 DUTs exxposed at the same time ass welll as the worst cases in amplitude and duration. Worrst case ampliitude is aboutt 364 LSBs that correspondss to amplitudee of 13.1V and
d worst case d
duration is arou
und 2.6µs. SETT record (trigggered by delta amplitu
ude higgher or equal tto 12 LSB
B) Zoo
om
Eveent delta (co
omparison of tthe inp
put current peeriod witth the previou
us one) Figure 11: R
RUN010, Xeno
on, process of a typical SET event record HRX/SEE//0430 Issue 01
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Hirex Engineering SEE Te
est Report
Ref. : Issue : HRX/SSEE/0430 01 RUN
N010, Xenon, SET envelop ffor DUT1 to D
DUT4
RUN010
0, Xenon, SETT WC (amplitud
de) for DUT1 to DUT4
RUN01
10, Xenon, SETT WC (duratio
on) for DUT1 to DUT4
Figure 12 – Xe
enon, SET envvelop and wo
orst cases (am
mplitude and d
duration) for D
DUT1 to DUT4
4 HRX/SEE//0430 Issue 01
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Hirex Engineering 6
SEE Test Report Ref. : Issue : HRX/SEE/0430 01 Glossary Most of the definitions here below are from JEDEC standard JESD89A DUT: Device under test. Fluence (of particle radiation incident on a surface): The total amount of particle radiant energy incident on a surface in a given period of time, divided by the area of the surface. In this document, Fluence is expressed in ions per cm2. Flux: The time rate of flow of particle radiant energy incident on a surface, divided by the area of that surface. In this document, Flux is expressed in ions per cm2*s. Single‐Event Effect (SEE): Any measurable or observable change in state or performance of a microelectronic device, component, subsystem, or system (digital or analog) resulting from a single energetic particle strike. Single‐Event Transient (SET): A soft error caused by the transient signal induced by a single energetic particle strike. Single‐Event Latch‐up (SEL): An abnormal high‐current state in a device caused by the passage of a single energetic particle through sensitive regions of the device structure and resulting in the loss of device functionality. SEL may cause permanent damage to the device. If the device is not permanently damaged, power cycling of the device (off and back on) is necessary to restore normal operation. An example of SEL in a CMOS device is when the passage of a single particle induces the creation of parasitic bipolar (p‐n‐p‐n) shorting of power to ground. Single‐Event Latch‐up (SEL) cross‐section: the number of events per unit fluence. For chip SEL cross‐section, the dimensions are cm2 per chip. Error cross‐section: the number of errors per unit fluence. For device error cross‐section, the dimensions are cm2 per device. For bit error cross‐section, the dimensions are cm2 per bit. Tilt angle: tilt angle, rotation axis of the DUT board is perpendicular to the beam axis; roll angle, board rotation axis is parallel to the beam axis Weibull Function: F(x) = A (1‐ exp{‐[(x‐x0)/W]s}) x = effective LET in MeV‐cm2 /milligram; F(x) = SEE cross‐section in square‐cm2/bit; A = limiting or plateau cross‐section; x0 = onset parameter, such that F(x) = 0 for x < x0; W = width parameter; s = a dimensionless exponent. HRX/SEE/0430 Issue 01
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