Supertex inc. TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold (2.0V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Product Summary Part Number Package Option Packing TN2524N8-G TO-243AA (SOT-89) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Package θja TO-243AA (SOT-89) 133OC/W VGS(TH) (max) (min) (max) 6.0Ω 1.0A 2.0V DRAIN SOURCE DRAIN GATE -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance 240V ID(ON) Pin Configuration Absolute Maximum Ratings Operating and storage temperature RDS(ON) BVDSS/BVDGS TO-243AA (SOT-89) Product Marking TN5CW W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) Doc.# DSFP-TN2524 C080913 Supertex inc. www.supertex.com TN2524 Thermal Characteristics Package (continuous)† (pulsed) ID Power Dissipation @TC = 25OC IDR† IDRM 360mA 2.0A 1.6W‡ 360mA 2.0A TO-243AA (SOT-89) ID Notes: † ID (continuous) is limited by max rated Tj . ‡ TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 240 - - V VGS = 0V, ID = 2.0mA VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - - -5.0 Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V - - 10 µA VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C 0.5 1.9 - 1.0 2.8 - - 4.0 6.0 - 4.0 6.0 - - 1.4 300 600 - ΔVGS(th) IGSS IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) ΔRDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature GFS Forward transductance CISS Input capacitance - 65 125 COSS Common source output capacitance - 35 70 CRSS Reverse transfer capacitance - 10 25 td(ON) Turn-on delay time - - 10 Rise time - - 10 Turn-off delay time - - 20 Fall time - - 20 Diode forward voltage drop - - Reverse recovery time - 300 tr td(OFF) tf VSD trr Conditions mV/ C VGS = VDS, ID= 1.0mA O A Ω %/ C O VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 250mA VGS = 10, ID = 500mA VGS = 10V, ID = 500mA mmho VDS = 25V, ID = 500mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 1.0A, RGEN = 25Ω 1.8 V VGS = 0V, ISD = 1.0A - ns VGS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-TN2524 C080913 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com TN2524 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 1.1 VGS = 4.5V 1.0 VGS = 10V 6 RDS(ON) (Ω) BVDSS (normalized) 8 4 2 0.9 0 50 100 0 150 0 1 2 3.0 3 4 5 Tj ( C) ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature O VDS = 25V 2.4 25OC 1.4 2.5 TA = -55OC 2.0 VGS(th) (normalized) 150OC ID (amperes) 2.0 1.5 1.0 1.2 V(th) @ 1mA 1.0 1.2 0.8 0.8 0.5 RDS(ON) @ 10V, 0.5A 0.6 0 1.6 RDS(ON) (normalized) -50 0 2 4 6 8 -50 10 05 0 VGS (volts) Tj (OC) Capacitance vs. Drain-to-Source Voltage 200 0.4 150 100 Gate Drive Dynamic Characteristics 10 f = 1MHz VDS = 10V 8 VGS (volts) C (picofarads) 150 100 6 VDS = 40V 150 pF 4 CISS 50 2 COSS 0 CRSS 0 10 20 30 63pF 0 40 0.4 0.8 1.2 1.6 2.0 QG (nanocoulombs) VDS (volts) Doc.# DSFP-TN2524 C080913 0 3 Supertex inc. www.supertex.com TN2524 Typical Performance Curves (cont.) Output Characteristics 10 VGS = 10V 8.0 8.0 VGS = 10V 8V 8V 6.0 ID (amperes) ID (amperes) Saturation Characteristics 10 6V 4.0 6V 6.0 4V 4.0 4V 2.0 3V 2V 0 0 10 20 30 40 3V 2.0 0 50 2V 0 2 4 Transconductance vs. Drain Current VDS = 25V 8 10 VDS (volts) VDS (volts) 1.0 6 Power Dissipation vs. Ambient Temperature 2.0 TA = -55OC TO-243AA TA = 25OC 0.6 PD (watts) GFS (siemens) 0.8 TA = 125OC 0.4 1.0 0.2 0 0 1.0 2.0 3.0 0 0 4.0 25 50 ID (amperes) Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) 10 TO-243AA (pulsed) 1.0 ID (amperes) 75 100 TO-243AA (DC) 0.1 0 10 100 0.8 0.6 0.4 0.2 0 0.001 1000 VDS (volts) Doc.# DSFP-TN2524 C080913 150 Thermal Response Characteristics TO-243AA TC = 25OC PD = 0.55W TA = 25OC 0.01 125 TA (OC) 0.01 0.1 1.0 10 tP (seconds) 4 Supertex inc. www.supertex.com TN2524 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2524 C080913 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com