Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Product Summary Part Number Package Option Packing TN5335K1-G TO-236AB (SOT-23) 3000/Reel TN5335N8-G TO-243AA (SOT-89) 2000/Reel BVDSS/BVDGS 350V -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. RDS(ON) ID(ON) (max) (min) 15Ω 750mA Absolute Maximum Ratings 2.0V DRAIN Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS GATE ±20V TO-236AB (SOT-23) Operating and storage temperature (max) Pin Configuration DRAIN Gate-to-source voltage VGS(th) -55 C to +150OC O SOURCE SOURCE DRAIN GATE TO-243AA (SOT-89) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Product Marking Typical Thermal Resistance Package may or may not include the following marks: Si or Package θja TO-236AB (SOT-23) 203OC/W TO-243AA (SOT-89) 173OC/W N3SW W = Code for week sealed = “Green” Packaging TO-236AB (SOT-23) TN3SW W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) Doc.# DSFP-TN5335 B081213 Supertex inc. www.supertex.com TN5335 Thermal Characteristics ID (continuous)† (pulsed) ID Power Dissipation @TA = 25OC IDR† IDRM TO-236AB (SOT-23) 110mA 0.8A 0.36W 110mA 0.8A TO-243AA (SOT-89) 230mA 1.3A 1.6W‡ 230mA 1.3A Package Notes: † ID (continuous) is limited by max rated Tj . ‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 350 - - V VGS = 0V, ID = 100µA VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - - -4.5 Gate body leakage - - 100 - - 1.0 - - 10 - - 1.0 300 - - 750 - - - - 15 - - 15 - - 15 - - 1.0 125 - - ΔVGS(th) IGSS IDSS ID(ON) RDS(ON) ΔRDS(ON) Zero gate voltage drain current On-state drain current Static drain-to-source on-state resistance Change in RDS(ON) with temperature GFS Forward transductance CISS Input capacitance - - 110 COSS Common source output capacitance - - 60 CRSS Reverse transfer capacitance - - 22 td(ON) Turn-on delay time - - 20 Rise time - - 15 Turn-off delay time - - 25 Fall time - - 25 Diode forward voltage drop - - Reverse recovery time - 800 tr td(OFF) tf VSD trr Conditions mV/OC VGS = VDS, ID= 1.0mA nA µA mA mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = 100V VGS = 0V, VDS = Max Rating VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 20mA Ω VGS = 4.5V, ID = 150mA VGS = 10V, ID = 200mA %/OC VGS = 4.5V, ID = 150mA mmho VDS = 25V, ID = 200mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 150mA, RGEN = 25Ω 1.8 V VGS = 0V, ISD = 200mA - ns VGS = 0V, ISD = 200mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Doc.# DSFP-TN5335 B081213 2 Supertex inc. www.supertex.com TN5335 Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-TN5335 B081213 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 3 Supertex inc. www.supertex.com TN5335 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E Gauge Plane 0.25 1 e b e1 Seating Plane L L1 2 View B Top View View B A A A2 Seating Plane A1 Symbol Dimension (mm) Side View View A - A A A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e 0.95 BSC e1 1.90 BSC L 0.20† 0.50 0.60 L1 0.54 REF θ 0O 8O JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version C041309. Doc.# DSFP-TN5335 B081213 4 Supertex inc. www.supertex.com TN5335 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e1 † 1.50 BSC 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN5335 B081213 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com