Supertex inc. 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► High input impedance and high gain The Supertex 2N7008 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► Motor controls ►► Converters ►► Amplifiers ►► Switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Product Summary Part Number Package Option Packing 2N7008-G TO-92 1000/Bag 2N7008-G P002 TO-92 2000/Reel 2N7008-G P003 TO-92 2000/Reel 2N7008-G P005 TO-92 2000/Reel 2N7008-G P013 TO-92 2000/Reel 2N7008-G PO14 TO-92 2000/Reel RDS(ON) BVDSX/BVDGS 60V ID(ON) 7.5 Ω 500mA Pin Configuration DRAIN -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. SOURCE GATE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±30V Operating and storage temperature (max) -55°C to +150°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-92 Product Marking S i 2N 7 0 0 8 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 Typical Thermal Characteristics Package θja TO-92 132OC/W * Mounted on FR4 board; 25mm x 25mm x 1.57mm Doc.# DSFP-2N7008 C062813 Supertex inc. www.supertex.com 2N7008 Thermal Characteristics ID Package TO-92 (continuous) (pulsed) ID Power Dissipation @TC = 25OC IDR 230mA 1.3A 1.0W 230mA † † IDRM 1.3A Note: † ID (continuous) is limited by max rated Tj. Electrical Characteristics (T = 25°C unless otherwise specified) A Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = -10µA VGS(th) Gate threshold voltage 1.0 - 2.5 V VGS = VDS, ID = 250µA - - 100 nA VGS = ±30V, VDS = 0V - - 1.0 - - 500 IGSS Gate body leakage current IDSS Zero gate voltage drain current ID(ON) On-state drain current 500 - - RDS(ON) Static drain-to-source on-state resistance - - 7.5 - - 7.5 80 - - GFS Forward transconductance CISS Input capacitance - - 50 COSS Common source output capacitance - - 25 CRSS Reverse transfer capacitance - - 5.0 t(ON) Turn-on time - - 20 t(OFF) Turn-off time - - 20 VSD Diode forward voltage drop - - 1.5 Conditions VGS = 0V, VDS = 50V µA VGS = 0V, VDS = 50V, TA = 125OC mA VGS = 10V, VDS ≥ 2.0VDS(ON) Ω mmho VGS = 5.0V, ID = 50mA VGS = 10V, ID = 500mA VDS = 10V, ID = 200mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 30V, ID = 200mA, RGEN = 25Ω V VGS = 0V, ISD = 150mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-2N7008 C062813 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com 2N7008 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-2N7008 C062813 3 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com