VN0109 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
VN0109
N-Channel Enhancement-Mode
Vertical DMOS FET
General Description
Features
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This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
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Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Ordering Information
Part Number
VN0109N3-G
VN0109N3-G P002
Package Option
Product Summary
Packing
TO-92
1000/Bag
TO-92
2000/Reel
BVDSS/BVDGS
90V
VN0109N3-G P003
VN0109N3-G P005
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
RDS(ON)
IDSS
(max)
(min)
3.0Ω
2.0A
Pin Configuration
VN0109N3-G P013
VN0109N3-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55 C to +150 C
O
O
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Typical Thermal Resistance
Package
θja
TO-92
132OC/W
Doc.# DSFP-VN0109
C081913
GATE
TO-92
Product Marking
SiVN
0 1 0 9
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Supertex inc.
www.supertex.com
VN0109
Thermal Characteristics
Package
TO-92
(continuous)†
ID
(pulsed)
ID
Power Dissipation
@TC = 25OC
IDR†
IDRM
350mA
2.0A
1.0W
350mA
2.0A
Notes:
† ID (continuous) is limited by max rated Tj .
Electrical Characteristics (T
A
Sym
Parameter
BVDSS
VGS(th)
= 25OC unless otherwise specified)
Min
Typ
Max
Units
Drain-to-source breakdown voltage
90
-
-
V
VGS = 0V, ID = 1.0mA
Gate threshold voltage
0.8
-
2.4
V
VGS = VDS, ID= 1.0mA
Change in VGS(th) with temperature
-
-3.8
-5.5
IGSS
Gate body leakage
-
-
100
-
-
1.0
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
ΔVGS(th)
RDS(ON)
ΔRDS(ON)
-
-
100
0.5
1.0
-
2.0
2.5
-
-
3.0
5.0
-
2.5
3.0
-
0.70
1.0
300
450
-
Static drain-to-source on-state resistance
Change in RDS(ON) with temperature
GFS
Forward transductance
CISS
Input capacitance
-
55
65
COSS
Common source output capacitance
-
20
25
CRSS
Reverse transfer capacitance
-
5.0
8.0
td(ON)
Turn-on delay time
-
3.0
5.0
Rise time
-
5.0
8.0
Turn-off delay time
-
6.0
9.0
Fall time
-
5.0
8.0
Diode forward voltage drop
-
1.2
Reverse recovery time
-
400
tr
td(OFF)
tf
VSD
trr
Conditions
mV/OC VGS = VDS, ID= 1.0mA
nA
µA
A
Ω
%/OC
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 5.0V, ID = 250mA
VGS = 10V, ID = 1.0A
VGS = 10V, ID = 1.0A
mmho VDS = 25V, ID = 500mA
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
ns
VDD = 25V,
ID = 1.0A,
RGEN = 25Ω
1.8
V
VGS = 0V, ISD = 1.0A
-
ns
VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V
Pulse
Generator
10%
t(ON)
td(ON)
VDD
OUTPUT
0V
Doc.# DSFP-VN0109
C081913
VDD
90%
t(OFF)
tr
td(OFF)
OUTPUT
RGEN
tf
10%
10%
90%
RL
INPUT
D.U.T.
90%
2
Supertex inc.
www.supertex.com
VN0109
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
5.0
1.1
VGS = 5.0V
RDS(ON) (Ω)
BVDSS (normalized)
4.0
1.0
VGS = 10V
3.0
2.0
1.0
0.9
0
50
100
0
150
0
0.5
1.0
V
Transfer Characteristics
2.5
1.5
2.0
2.5
ID (amperes)
Tj ( C)
O
(th)
1.6
and RDS Variation with Temperature
1.9
VDS = 25V
1.6
1.4
TA = -55OC
VGS(th) (normalized)
ID (amperes)
2.0
25OC
1.5
125OC
1.0
RDS @ 10V, 1.0A
1.3
1.2
V(th) @ 1.0mA
RDS @ 5.0V, 0.25A
1.0
1.0
0.7
RDS(ON) (normalized)
-50
0.8
0.5
0.4
0
0
2
4
6
8
0.6
-50
10
0
50
VGS (volts)
150
Gate Drive Dynamic Characteristics
Capacitance vs. Drain-to-Source Voltage
100
10
f = 1.0MHz
VDS = 10V
8
75
40V
VGS (volts)
C (picofarads)
100
Tj (OC)
50
CISS
6
80 pF
4
25
2
COSS
0
40 pF
CRSS
0
10
20
30
0
40
0.2
0.4
0.6
0.8
1.0
QG (nanocoulombs)
VDS (volts)
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0
3
Supertex inc.
www.supertex.com
VN0109
Typical Performance Curves (cont.)
Output Characteristics
2.5
Saturation Characteristics
2.5
VGS = 10V
9.0V
VGS = 10V
8.0V
2.0
9.0V
2.0
8.0V
7.0V
ID (amperes)
ID (amperes)
7.0V
1.5
6.0V
1.0
5.0V
0.5
4.0V
1.5
6.0V
1.0
5.0V
0.5
4.0V
3.0V
0
0
10
20
30
3.0V
0
40
0
2.0
4.0
Transconductance vs. Drain Current
1.0
6.0
8.0
10
VDS (volts)
VDS (volts)
2.0
VDS = 25V
Power Dissipation vs. Case Temperature
0.6
PD (watts)
GFS (siemens)
0.8
TA = -55OC
25OC
0.4
125OC
1.0
TO-92
0.2
0
0
0.2
0.4
0.6
0.8
0
1.0
0
25
50
ID (amperes)
Maximum Rated Safe Operating Area
1.0
Thermal Resistance (normalized)
ID (amperes)
10
1.0
TO-92 (DC)
0.1
0.01
0.1
TC = 25OC
1.0
10
100
125
150
Thermal Response Characteristics
0.8
0.6
0.4
0.2
0
0.001
100
VDS (volts)
Doc.# DSFP-VN0109
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75
TC (OC)
TO-92
PD = 1.0W
TC = 25OC
0.01
0.1
1.0
10
tP (seconds)
4
Supertex inc.
www.supertex.com
VN0109
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
D
E
E1
e
e1
L
MIN
.170
.014†
.014†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VN0109
C081913
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com