Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Part Number VN0550N3-G VN0550N3-G P002 Package Option Product Summary Packing TO-92 1000/Bag TO-92 2000/Reel BVDSS/BVDGS 500V VN0550N3-G P003 VN0550N3-G P005 Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. RDS(ON) IDSS (max) (min) 60Ω 150mA Pin Configuration VN0550N3-G P013 VN0550N3-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. DRAIN SOURCE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55 C to +150 C O Package θja TO-92 132OC/W Doc.# DSFP-VN0550 C081913 Product Marking O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance GATE TO-92 SiVN 0 5 5 0 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 Supertex inc. www.supertex.com VN0550 Thermal Characteristics Package (continuous)† (pulsed) ID Power Dissipation @TC = 25OC IDR† IDRM 50mA 250mA 1.0W 50mA 250mA TO-92 ID Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T = 25°C unless otherwise specified) A Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 500 - - V VGS = 0V, ID = 1.0mA VGS(th) Gate threshold voltage 2.0 - 4.0 V VGS = VDS, ID = 1.0mA Change in VGS(th) with temperature - -3.8 -5.0 O mV/ C VGS = VDS, ID = 1.0mA IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V - - 10 µA IDSS Zero gate voltage drain current VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC ID(ON) On-state drain current - 100 - 150 350 - Static drain-to-source on-state resistance - 45 - - 40 60 Change in RDS(ON) with temperature - 1.0 1.7 %/OC VGS = 10V, ID = 50mA 50 100 - mmho VDS = 25V, ID = 50mA ΔVGS(th) RDS(ON) ΔRDS(ON) GFS Forward transconductance CISS Input capacitance - 45 55 COSS Common source output capacitance - 8.0 10 CRSS Reverse transfer capacitance - 2.0 5.0 td(ON) Turn-on time - - 10 Rise time - - 15 Turn-off time - - 10 Fall time - Diode forward voltage drop - 0.8 Reverse recovery time - 300 tr td(OFF) tf VSD trr mA Ω Conditions VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5.0V, ID = 50mA VGS = 10V, ID = 50mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 150mA, RGEN = 25Ω - V VGS = 0V, ISD = 500mA - ns VGS = 0V, ISD = 500mA 10 Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-VN0550 C081913 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com VN0550 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 100 1.1 RDS(ON) (Ω) BVDSS (normalized) 80 1.0 VGS = 5.0V VGS = 10V 60 40 20 0.9 -50 50 100 0 0 150 0.1 0.2 0.4 0.5 ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature VDS = 25V 1.8 1.4 RDS(ON) @ 10V, 50mA 0.4 TA = -55OC 25OC VGS(th) (normalized) ID (amperes) 0.3 Tj (OC) 0.3 150OC 0.2 1.2 1.4 1.0 1.0 V(th) @ 1.0mA 0.8 0.6 RDS(ON) (normalized) 0.5 0 0.1 0.2 0.6 0 0 2.0 4.0 6.0 8.0 -50 10 0 50 VGS (volts) 100 Tj ( C) Capacitance vs. Drain-to-Source Voltage 100 10 Gate Drive Dynamic Characteristics VDS = 10V f = 1MHz 8.0 105 pF VGS (volts) 75 C (picofarads) 150 O 50 CISS 6.0 VDS = 40V 4.0 112 pF 25 2.0 COSS 50 pF CRSS 0 0 10 20 30 0 40 Doc.# DSFP-VN0550 C081913 0 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) VDS (volts) 3 Supertex inc. www.supertex.com VN0550 Typical Performance Curves (cont.) Output Characteristics 0.5 Saturation Characteristics 0.25 VGS = 10V 8.0V 0.4 VGS = 10V 0.20 8.0V 0.3 6.0V 0.15 ID (amperes) ID (amperes) 6.0V 0.2 0.10 0.1 0.05 4V 4.0V 0 0 10 20 30 40 VDS (volts) 0 50 2.0 4.0 6.0 8.0 VDS (volts) 10 Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 0.40 0 2.0 VDS = 25V TA = -55OC 0.24 25OC 0.16 TO-92 1.0 125OC 0.08 0 PD (watts) GFS (siemenns) 0.32 0 0.1 0.2 0.3 0.4 0 0.5 0 25 50 ID (amperes) Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) ID (amperes) 1.0 0.1 TO-92 (DC) 0.01 0.001 1.0 TC = 25OC 10 100 100 125 150 Thermal Response Characteristics 0.8 0.6 0.4 TO-92 PD = 1.0W TC = 25OC 0.2 0 1000 0 0.01 0.1 1.0 10 tP (seconds) VDS (volts) Doc.# DSFP-VN0550 C081913 75 TC (OC) 4 Supertex inc. www.supertex.com VN0550 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN0550 C081913 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com