Supertex inc. VN2110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► High input impedance and high gain Applications ►► Motor controls ►► Converters ►► Amplifiers ►► Switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Product Summary Part Number Package Option Packing VN2110K1-G TO-236AB (SOT-23) 3000/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage RDS(ON) BVDSS/BVDGS (max) 100V 4.0Ω Pin Configuration Absolute Maximum Ratings DRAIN SOURCE ±20V Operating and storage temperature -55 C to +150OC O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance Package θja TO-236AB (SOT-23) 203OC/W Doc.# DSFP-VN2110 B082013 This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. GATE TO-236AB (SOT-23) Product Marking N1AW W = Code for Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-236AB (SOT-23) Supertex inc. www.supertex.com VN2110 Thermal Characteristics ID Package TO-236AB (SOT-23) (continuous)† ID Power Dissipation (pulsed) @TC = 25OC 200mA 800mA 0.36W IDR† IDRM 200mA 800mA Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T = 25°C unless otherwise specified) A Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 100 - - V VGS = 0V, ID = 1.0mA VGS(th) Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID = 1.0mA Change in VGS(th) with temperature - -3.8 -5.5 O mV/ C VGS = VDS, ID = 1.0mA IGSS Gate body leakage current - 0.1 100 nA VGS = ±20V, VDS = 0V - - 1.0 IDSS Zero gate voltage drain current ID(ON) On-state drain current ΔVGS(th) RDS(ON) ΔRDS(ON) 100 0.6 - - - 4.5 6.0 - 3.0 4.0 - 0.7 1.0 %/OC VGS = 10V, ID = 500mA 150 400 - mmho VDS = 25V, ID = 500mA Static drain-to-source on-state resistance Change in RDS(ON) with temperature CISS Input capacitance - 35 50 COSS Common source output capacitance - 13 25 CRSS Reverse transfer capacitance - 4.0 5.0 td(ON) Turn-on delay time - 3.0 5.0 Rise time - 5.0 8.0 Turn-off delay time - 6.0 9.0 Fall time - 5.0 8.0 Diode forward voltage drop - 1.2 Reverse recovery time - 400 tf VSD trr VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC - Forward transconductance td(OFF) VGS = 0V, VDS = Max Rating - GFS tr µA Conditions A Ω VGS = 10V, VDS = 25V VGS = 5.0V, ID = 75mA VGS = 10V, ID = 500mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 600mA, RGEN = 25Ω 1.8 V VGS = 0V, ISD = 600mA - ns VGS = 0V, ISD = 600mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-VN2110 B082013 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com VN2110 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 1.1 VGS = 5.0V RDS(ON) (ohms) BVDSS (normalized) 8.0 1.0 VGS = 10V 6.0 4.0 2.0 0.9 -50 50 100 0 150 0 0.5 1.0 2.0 2.5 ID (amperes) Transfer Characteristics VGS(th) and RDS(ON) Variation with Temperature 2.0 VDS = 25V 1.4 RDS(ON) @ 10V, 0.5A VGS(th) (normalized) 1.6 ID (amperes) 1.5 Tj (OC) TA = -55OC 1.2 0.8 25OC 125OC 1.6 1.2 1.2 1.0 0.8 VGS(th) @ 1.0mA 0.8 0.4 RDS(ON) (normalized) 2.0 0 0.4 0.6 0 0 2.0 4.0 6.0 8.0 VGS (volts) 10 -50 0 50 Tj ( C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 50 f = 1.0MHz VDS = 10V 8.0 CISS VGS (volts) C (picofarads) 0 150 100 O 25 90 pF 6.0 VDS = 40V 4.0 COSS 2.0 30 pF CRSS 0 0 10 20 30 0 40 VDS (volts) Doc.# DSFP-VN2110 B082013 3 0 0.2 0.4 0.6 QG (nanocoulombs) 0.8 1.0 Supertex inc. www.supertex.com VN2110 Typical Performance Curves (cont.) Output Characteristics Saturation Characteristics 2.0 2.0 VGS = 10V 1.6 VGS = 10V 1.6 ID (amperes) ID (amperes) 9V 1.2 8V 0.8 7V 9V 1.2 8V 0.8 7V 6V 0.4 0 0 10 20 30 40 5V 4V 3V 50 0 VDS (volts) 4V 3V 0 2.0 4.0 6.0 8.0 10 VDS (volts) Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 0.5 6V 0.4 5V 2.0 VDS = 25V TA = -55OC 0.3 PD (watts) GFS (siemens) 0.4 25OC 0.2 TO-92 1.0 125OC 0.1 0 0 0.2 0.4 0.6 0.8 0 1.0 0 25 50 ID (amperes) 100 125 150 TC (OC) Thermal Response Characteristics Maximum Rated Safe Operating Area 10 Thermal Resistance (normalized) 1.0 TO-92 (pulsed) ID (amperes) 1.0 TO-92 (DC) 0.1 0.01 75 TA = 25OC 0.1 1.0 10 0.6 0.4 TO-92 PD = 1.0W TA = 25OC 0.2 0 100 VDS (volts) Doc.# DSFP-VN2110 B082013 0.8 0.001 0.01 0.1 1.0 10 tP (seconds) 4 Supertex inc. www.supertex.com VN2110 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E Gauge Plane 0.25 1 e b e1 Seating Plane L L1 2 View B Top View View B A A A2 Seating Plane A1 Side View Symbol Dimension (mm) View A - A A A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e e1 L L1 0.20 † 0.95 BSC 1.90 BSC 0.50 0.60 0.54 REF θ 0O 8O JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version C041309. (The package drawing (s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN2110 B082013 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com