VN2210 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description • • • • • • • VN2210 is an Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Free from Secondary Breakdown Low Power Drive Requirement Ease of Paralleling Low CISS and Fast Switching Speeds Excellent Thermal Stability Integral Source-drain Diode High Input Impedance and High Gain Applications • • • • • • Motor Controls Converters Amplifiers Switches Power Supply Circuits Drivers (Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.) Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Types TO-92 TO-39 DRAIN GATE SOURCE SOURCE DRAIN 2016 Microchip Technology Inc. GATE DS20005559A-page 1 VN2210 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Drain-to-source Voltage ........................................................................................................................................ BVDSS Drain-to-gate Voltage ............................................................................................................................................BVDGS Gate-to-source Voltage ........................................................................................................................................... ±20V Operating and Storage Temperatures ................................................................................................. –55°C to +150°C † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = 25°C unless otherwise specified. Parameters Sym. Min. DC PARAMETERS (Note 1 unless otherwise specified) 100 Drain-to-source Breakdown Voltage BVDSS 0.8 Gate Threshold Voltage VGS(th) Change in VGS(th) with Temperature ∆VGS(th) — — Gate Body Leakage Current IGSS — Zero Gate Voltage Drain Current IDSS — ON-State Drain Current Static Drain-to-source ON-State Resistance ID(ON) RDS(ON) 3 8 — — — Typ. Max. Units Conditions — — –4.3 — — — 2.4 –5.5 100 50 V V mV/°C nA µA — 10 mA 4.5 17 0.4 0.27 0.85 — — 0.5 0.35 1.2 VGS = 0V, ID = 10 mA VGS = VDS, ID = 10 mA VGS = VDS, ID = 10 mA (Note 2) VGS = ±20V, VDS = 0V VGS = 0V, VDS = Maximum rating VDS = 0.8 maximum rating, VGS = 0V, TA = 125°C (Note 2) VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 1A VGS = 10V, ID = 4A VGS = 10V, ID = 4A (Note 2) A Ω %/°C Change in RDS(ON) with Temperature ∆RDS(ON) AC PARAMETERS (Note 2) 1200 — — mmho Forward Transconductance GFS — 300 500 Input Capacitance CISS Common Source Output Capacitance COSS — 125 200 pF Reverse Transfer Capacitance CRSS — 50 65 — 10 15 Turn-on Time td(ON) — 10 15 Rise Time tr ns Turn-off Time td(OFF) — 50 65 — 30 50 Fall Time tf DIODE PARAMETERS — 1 1.6 V Diode Forward Voltage Drop VSD — 500 — ns Reverse Recovery Time trr Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle) 2: Specification is obtained by characterization and is not 100% tested. DS20005559A-page 2 VDS = 25V, ID = 2A VGS = 0V, VDS = 25V, f = 1 MHz VDD = 25V, ID = 2A, RGEN = 10Ω VGS = 0V, ISD = 4A (Note 1) VGS = 0V, ISD = 1A (Note 2) 2016 Microchip Technology Inc. VN2210 TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise specified, for all specifications TA =TJ = +25°C. Parameters Sym. Min. Typ. Max. Units Operating Temperature TA –55 — +150 °C Storage Temperature TS –55 — +150 °C TO-39 JA — N/A — — TO-92 JA — 132 — °C/W Conditions TEMPERATURE RANGES PACKAGE THERMAL RESISTANCES THERMAL CHARACTERISTICS ID (Note 1) (Continuous) (A) ID (Pulsed) (A) Power Dissipation at TC = 25°C (W) IDR (Note 1) (A) IDRM (A) TO-39 1.7 10 0.36 1.7 10 TO-92 1.2 8 0.74 1.2 8 Package Note 1: ID (continuous) is limited by maximum Tj. 2016 Microchip Technology Inc. DS20005559A-page 3 VN2210 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. 1.0 1.1 VGS = 5.0V RDS(ON) (ohms) BVDSS (normalized) 0.8 1.0 VGS = 10V 0.6 0.4 0.2 0.9 -50 0 50 100 0 150 0 4.0 Tj (OC) FIGURE 2-1: Temperature. BVDSS Variation with 12 16 20 On-resistance vs. Drain FIGURE 2-4: Current. 10 1.2 VDS = 25OC RDS(ON) @ 10V, 4.0A 8.0 2.0 TA = -55OC 6.0 25OC 4.0 150OC 2.0 1.6 1.0 1.2 0.9 0.8 0.8 RDS(ON) (normalized) 1.1 VGS(th) (normalized) ID (amperes) 8.0 ID (amperes) VGS(th) @ 10mA 0.4 0 0 2.0 4.0 6.0 8.0 10 0.7 -50 0 VGS (volts) Transfer Characteristics. FIGURE 2-2: 50 100 150 Tj (OC) FIGURE 2-5: with Temperature. 500 VGS and RVDS Variation 10 f = 1.0MHz VDS = 10V 8.0 CISS VGS (volts) C (picofarads) 375 250 6.0 900 pF 4.0 VDS = 40V COSS 125 2.0 300 pF CRSS 0 0 10 20 30 40 0 0 VDS (volt) FIGURE 2-3: Capacitance vs. Drain-to-source Voltage. DS20005559A-page 4 2.0 4.0 6.0 8.0 10 QG (nanocoulombs) FIGURE 2-6: Characteristics. Gate Drive Dynamic 2016 Microchip Technology Inc. VN2210 20 20 VGS = 10V VGS = 10V 16 8V 12 8.0 ID (amperes) ID (amperes) 16 6V 8V 12 8.0 6V 4.0 4.0 4V 4V 3V 3V 0 0 0 0 10 20 30 40 50 2.0 4.0 FIGURE 2-7: 6.0 8.0 10 VDS (volts) VDS (volts) Output Characteristics. Saturation Characteristics. FIGURE 2-10: 4.0 10 VDS = 25OC 8.0 TA = 55OC 2.4 PD (watts) GFS (siemens) 3.2 25OC 1.6 TO-39 6.0 4.0 150OC 2.0 0.8 TO-92 0 0 0 0.8 1.6 2.4 3.2 0 4.0 25 50 FIGURE 2-8: Current. Transconductance vs. Drain FIGURE 2-11: Temperature. 100 125 150 Power Dissipation vs. Case 1.0 10 TO-39 (pulsed) Thermal Resistance (normalize) TO-92 (pulsed) TO-39 (DC) 1.0 ID (amperes) TO-92 (DC) 0.1 TC = 25OC 0.01 75 TC (OC) ID (amperes) 0.1 0.8 0.6 0.4 TO-92 TC = 25OC PD = 1.0W 0.2 0 1.0 10 100 0.001 VDS (volts) FIGURE 2-9: Operating Area. Maximum Rated Safe 2016 Microchip Technology Inc. 0.01 0.1 1.0 10 tP (seconds) FIGURE 2-12: Characteristics. Thermal Response DS20005559A-page 5 VN2210 3.0 PIN DESCRIPTION Table 3-1 shows the description of pins in TO-39 and TO-92. TABLE 3-1: TO-39/TO-92 PIN FUNCTION TABLE Pin Number TO-39 TO-92 1 Source Source Description Source 2 Gate Gate Gate 3 Drain Drain Drain DS20005559A-page 6 2016 Microchip Technology Inc. VN2210 4.0 FUNCTIONAL DESCRIPTION Figure 4-1 illustrates the switching waveforms and test circuit for VN2210. 10V VDD 90% Pulse Generator INPUT 0V 10% t(ON) t(OFF) tr td(ON) VDD td(OFF) 0V RGEN 10% 90% FIGURE 4-1: OUTPUT tf 10% OUTPUT RL INPUT D.U.T. 90% Switching Waveforms and Test Circuit. PRODUCT SUMMARY BVDSS/BVDGS (V) RDS(ON) (Maximum) (Ω) VGS(th) (Maximum) (V) 100 0.35 2.4 2016 Microchip Technology Inc. DS20005559A-page 7 VN2210 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 3-Lead TO-39 Example XXXXXXXXXX YYWW NNN e4 VN2210 1611 789 e4 3-lead TO-92 XXXXXX XX e3 YWWNNN Legend: XX...X Y YY WW NNN e3 * Note: DS20005559A-page 8 Example VN2210 N3 e3 613347 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. Pre-plated In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. 2016 Microchip Technology Inc. VN2210 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. 2016 Microchip Technology Inc. DS20005559A-page 9 VN2210 3-Lead TO-92 Package Outline (L/LL/N3) Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. Symbol MIN Dimensions (inches) A b c D E E1 e e1 L .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. S t D # DSPD 3TO92N3 V i E041009 DS20005559A-page 10 2016 Microchip Technology Inc. VN2210 APPENDIX A: REVISION HISTORY Revision A (June 2016) • Converted Supertex Doc# DSFP-VN2210 to Microchip DS20005559A. • Made minor text changes throughout the document. DS20005559A-page 11 2016 Microchip Technology Inc. VN2210 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. XX PART NO. Package Options Device Device: Packages: - X - Environmental X Examples: a) VN2210N2: N-Channel Enhancement-Mode Vertical DMOS FET, 3-lead TO-39 Package, 500/Bag b) VN2210N3-G: N-Channel Enhancement-Mode Vertical DMOS FET, 3-lead TO-92 Package, 1000/Bag Media Type VN2210 = N-Channel Enhancement-Mode Vertical DMOS FET N2 = 3-lead TO-39 N3 = 3-lead TO-92 Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Type: (blank) = 500/Bag for N2 Package 1000/Bag for N3 Package Note: VN2210N2 does not include a “-G” designator. However, the package is an RoHS-compliant product. 2016 Microchip Technology Inc. DS20005559A-page 12 Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITYMANAGEMENTSYSTEM CERTIFIEDBYDNV == ISO/TS16949== 2016 Microchip Technology Inc. Trademarks The Microchip name and logo, the Microchip logo, AnyRate, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, ETHERSYNCH, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker, Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2016, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. 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