SMBTA14/MMBTA14 NPN Silicon Darlington Transistor • High collector current 2 3 • Low collector-emitter saturation voltage 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBTA14/MMBTA14 s1N Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 10 Collector current IC 300 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point2) Symbol RthJS Value Unit V mA TS ≤ 81 °C -65 ... 150 Value ≤ 210 Unit K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 SMBTA14/MMBTA14 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-base breakdown voltage V(BR)CBO 30 V IC = 10 µA, IE = 0 Collector-emitter breakdown voltage V(BR)CES 30 - - V(BR)EBO 10 - - IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 °C - - 10 - - 100 Emitter-base cutoff current I EBO nA VEB = 10 V, IC = 0 DC current gain1) - h FE IC = 10 mA, VCE = 5 V 10000 - - IC = 100 mA, V CE = 5 V 20000 - - VCEsat - - 1.5 VBEsat - - 2 125 - - MHz - 3 - pF Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency fT IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance Ccb VCB = 10 V, f = 100 MHz 1Pulse test: t < 300µs; D < 2% 2 2007-04-19 SMBTA14/MMBTA14 DC current gain hFE = ƒ(IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 1000 SMBTA 13/14 EHP00829 5 ΙC EHP00826 mA 125 ˚C 10 5 SMBTA 13/14 10 3 150 ˚C 25 ˚C -50 ˚C 10 2 25 ˚C 5 5 -55 ˚C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 mA 10 10 0 3 0 0.5 1.0 V ΙC V CEsat Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 1000 10 3 SMBTA 13/14 1.5 EHP00827 10 mA 4 SMBTA 13/14 EHP00828 nA ΙC Ι CB0 150 ˚C 25 ˚C -50 ˚C 10 2 max 10 3 5 5 typ 10 2 5 10 1 10 1 5 5 10 0 0 1.0 2.0 V 10 0 3.0 V BEsat 0 50 100 ˚C 150 TA 3 2007-04-19 SMBTA14/MMBTA14 Transition frequency fT = ƒ(IC) VCE = 5 V, f = 200 MHz 10 3 MHz EHP00825 19 pF 5 CCB/CEB fT SMBTA 13/14 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 15 13 11 10 2 CEB 9 5 7 5 CCB 3 10 1 10 0 5 10 1 5 10 2 mA 1 0 10 3 4 8 12 16 V 22 VCB/VEB ΙC Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 360 mW SMBTA 13/14 Ptot max 5 Ptot DC 300 EHP00824 D= tp T tp T Ptot 270 240 10 2 210 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 180 150 120 10 1 90 5 60 30 0 0 15 30 45 60 75 90 105 120 10 0 10 -6 °C 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2007-04-19 Package SOT23 SMBTA14/MMBTA14 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 5 2007-04-19 SMBTA14/MMBTA14 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-19